50MT060WH Vishay, 50MT060WH Datasheet - Page 4

• Manufacturer Part Number: 50MT060WH
• Description: IGBT WARP 600V 114A MTP
• Manufacturer: Vishay

Specifications of 50MT060WH

• Igbt Type: PT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 100A
• Current - Collector (ic) (max): 114A
• Current - Collector Cutoff (max): 400µA
• Input Capacitance (cies) @ Vce: 7.1nF @ 30V
• Power - Max: 658W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 12-MTP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *50MT060WH; VS-50MT060WH; VS-50MT060WH; VS50MT060WH; VS50MT060WH

4
50MT060WH
I27120 rev. D 02/03
2.5
1.5
3
2
1
20
Fig. 3 - Typical Collector-to-Emitter Voltage vs.
40
T
J
, Junction Temperature (°C)
60
Fig. 5 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
Junction Temperature
80 100 120 140 160
I = 20A
100
I = 100A
I = 50A
C
C
C
10
1
0.4
Forward Voltage Drop - V
0.8
1.2
T = 150˚C
T = 125˚C
T = 25˚C
J
J
J
1.6
20
16
12
FM
8
4
0
0
(V)
Vcc = 400V
2
Ic = 52A
Fig. 4 - Typical Gate Charge vs. Gate-to-
Q
2.4
100
G
, Total Gate Charge (nC)
Emitter Voltage
200
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300
400