FB180SA10 Vishay, FB180SA10 Datasheet

FB180SA10

Manufacturer Part Number

FB180SA10

Description

MOSFET N-CH 100V 180A SOT-227

Manufacturer

Vishay

Series

HEXFET®r

Datasheet

1.FB180SA10.pdf (8 pages)

Specifications of FB180SA10

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

6.5 mOhm @ 108A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

180A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

380nC @ 10V

Input Capacitance (ciss) @ Vds

10700pF @ 25V

Power - Max

480W

Mounting Type

Chassis Mount

Package / Case

SOT-227, miniBLOC

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*FB180SA10
VS-FB180SA10
VS-FB180SA10
VSFB180SA10
VSFB180SA10

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FB180SA10

Manufacturer:

AOS

Quantity:

21 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FB180SA10

Manufacturer:

Quantity:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FB180SA10P

Manufacturer:

VISHAY

Quantity:

340

Company:

BOSTOCK HK LIMITED

Part Number:

FB180SA10P

Manufacturer:

Company:

Meier Automation Equipment Co., Limited

Part Number:

FB180SA10P

Manufacturer:

VISHAY/威世

Quantity:

20 000

Current page: 1 of 8
Download datasheet (138Kb)

Absolute Maximum Ratings

Thermal Resistance

Fifth Generation, high current density HEXFETS are

paralled into a compact, high power module providing

the best combination of switching, ruggedized design,

very low ON resistance and cost effectiveness.

The isolated SOT-227 package is preferred for all

commercial - industrial applications at power

dissipation levels to approximately 500 watts. The low

thermal resistance and easy connection to the SOT-

227 package contribute to its universal acceptance

throughout the industry.

Description

dv/dt

STG

ISO

qJC

qCS

@ T

Fully Isolated Package

Easy to Use and Parallel

Dynamic dv/dt Rating

Fully Avalanche Rated

Simple Drive Requirements

Low Drain to Case Capacitance

Low Internal Inductance

Very Low On-Resistance

= 25°C

= 100°C

= 25°C

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Insulation Withstand Voltage (AC-RMS)

Mounting torque, M4 srew

Parameter

@ 10V

Typ.

0.05

–––

HEXFET

-55 to + 150

FB180SA10

Max.

180

120

720

480

± 20

700

180

2.7

5.7

1.3

2.5

S O T -22 7

DS(on)

Power MOSFET

Max.

DSS

0.26

–––

= 180A

= 0.0065W

www.irf.com

= 100V

PD- 91651C

Units

°C/W

W/°C

V/ns

N•m

°C

2/1/99

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