FB180SA10 Vishay, FB180SA10 Datasheet - Page 4

• Manufacturer Part Number: FB180SA10
• Description: MOSFET N-CH 100V 180A SOT-227
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of FB180SA10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 108A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 380nC @ 10V
• Input Capacitance (ciss) @ Vds: 10700pF @ 25V
• Power - Max: 480W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *FB180SA10; VS-FB180SA10; VS-FB180SA10; VSFB180SA10; VSFB180SA10

FB180SA10
4
20000
15000
10000
1000
5000
100
0.1
10
1
0
0.2
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 150 C
J
V
V
Drain-to-Source Voltage
SD
DS
C
C
C
0.6
V
C
C
C
°
,Source-to-Drain Voltage (V)
oss
rss
, Drain-to-Source Voltage (V)
iss
Forward Voltage
GS
iss
rss
oss
=
=
=
=
0V,
C
C
C
T = 25 C
J
gs
gd
ds
+ C
+ C
1.0
10
°
f = 1MHz
gd ,
gd
C
ds
1.4
V
SHORTED
GS
= 0 V
1.8
100
10000
1000
100
20
15
10
10
5
0
1
Fig 8. Maximum Safe Operating Area
0
1
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
C
J
= 25 C
= 150 C
50
180 A
OPERATION IN THIS AREA LIMITED
V
DS
Q , Total Gate Charge (nC)
Gate-to-Source Voltage
°
°
100
G
, Drain-to-Source Voltage (V)
10
150
BY R
200
DS(on)
V
V
V
DS
DS
DS
FOR TEST CIRCUIT
250
SEE FIGURE
= 80V
= 50V
= 20V
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100
10us
100us
1ms
10ms
300
350
13
400
1000