IRAMS10UP60B International Rectifier, IRAMS10UP60B Datasheet

PLUG N DRIVE INTELLIGENT PWR MOD

IRAMS10UP60B

Manufacturer Part Number
IRAMS10UP60B
Description
PLUG N DRIVE INTELLIGENT PWR MOD
Manufacturer
International Rectifier
Series
iMOTION™r
Type
IGBTr
Datasheets

Specifications of IRAMS10UP60B

Configuration
3 Phase
Current
10A
Voltage
600V
Voltage - Isolation
2000Vrms
Package / Case
PCB Module
Current, Input Bias
200 μA
Current, Quiescent Supply
165 μA
Current, Rms Phase
10 A
Frequency
20 KHz
Number Of Pins
25
Power Dissipation
2.2 W
Switching Loss
275 μJ
Temperature, Junction, Maximum
150 °C
Voltage, Breakdown, Collector To Emitter
600 V
Voltage, Input
20 + 0.3 V
Voltage, Input, High Level
3 V
Voltage, Input, Low Level
0.8 V
Voltage, Supply
20 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRAMS10UP60B

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRAMS10UP60B
Manufacturer:
Quantity:
5 510
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRAMS10UP60B-2
Manufacturer:
ST
Quantity:
1 001
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRAMS10UP60B-2
Manufacturer:
IR
Quantity:
5 510
Price:
www.irf.com
Parameter
V
V
I
I
I
F
P
V
T
T
T
Absolute Maximum Ratings
O
O
O
PWM
J
J
CES
+
D
ISO
@ T
@ T
(IGBT & Diodes)
(Driver IC)
/ V
C
C
=25°C
=100°C
RRM
IGBT/Diode Blocking Voltage
Positive Bus Input Voltage
RMS Phase Current (Note 1)
RMS Phase Current (Note 1)
Pulsed RMS Phase Current (Note 2)
PWM Carrier Frequency
Power dissipation per IGBT @ TC =25°C
Isolation Voltage (1min)
Operating Junction temperature Range
Operating Junction temperature Range
Mounting torque Range (M3 screw)
Description
-40 to +150
-40 to +150
0.5 to 1.0
Values
2000
600
450
10
15
20
27
5
Rev.H 011508
Units
V
kHz
Nm
°C
W
RMS
V
A
1

Related parts for IRAMS10UP60B

IRAMS10UP60B Summary of contents

Page 1

Absolute Maximum Ratings Parameter IGBT/Diode Blocking Voltage CES RRM + Positive Bus Input Voltage =25°C RMS Phase Current (Note =100°C RMS Phase Current (Note ...

Page 2

... IRAMS10UP60B Internal Electrical Schematic - IRAMS10UP60B V (10 (12) VB1 (7) U, VS1 (8) VB2 (4) V, VS2 (5) VB3 (1) W, VS3 (2) HIN1 (15) HIN2 (16) HIN3 (17) LIN1 (18) LIN2 (19) LIN3 (20) FLT-EN(21) I (22) TRIP THERMISTOR V (13 (14 (23 VS1 LO1 16 VB2 HO2 VS2 VB3 HO3 VS3 24 HO1 25 VB1 LO2 15 1 VCC Driver IC ...

Page 3

... Current V Diode Forward Voltage Drop FM Bootstrap Diode Forward Voltage V BDFM Drop R Bootstrap Resistor Value BR ∆R /R Bootstrap Resistor Tolerance BR BR Current Protection Threshold I BUS_TRIP (positive going) www.irf.com IRAMS10UP60B Min Max Units --- 4.5 --- +0.3 B1,2,3 B1,2,3 -0.3 600 -0.3 20 Lower of (V +15V) or -0.3 ...

Page 4

... IRAMS10UP60B Inverter Section Switching Characteristics @ T Symbol Parameter E Turn-On Switching Loss ON E Turn-Off Switching Loss OFF E Total Switching Loss TOT E Diode Reverse Recovery energy REC t Diode Reverse Recovery time RR E Turn-On Switching Loss ON E Turn-off Switching Loss OFF E Total Switching Loss TOT ...

Page 5

... IN =5V =0V =5V =0V Min Typ Max --- 590 --- --- 700 --- 100 200 --- 100 150 220 290 360 --- 40 75 --- --- 1.75 --- 7.7 --- --- 6.7 --- IRAMS10UP60B and are TRIP Min Typ Max Units 3.0 --- --- V --- --- 0.8 V 10.6 11.1 11.6 V 10.4 10.9 11.4 V --- 0.2 --- V 4.9 5.2 5.5 V --- --- 165 µA ...

Page 6

... IRAMS10UP60B Thermal and Mechanical Characteristics Symbol Parameter R Thermal resistance, per IGBT th(J-C) R Thermal resistance, per Diode th(J-C) R Thermal resistance, C-S th(C-S) C Creepage Distance D Internal Current Sensing Resistor - Shunt Characteristics Symbol Parameter R Resistance Shunt T Temperature Coefficient Coeff P Power Dissipation Shunt T Temperature Range ...

Page 7

... Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load. www.irf.com 6µs 1µs for at least 6µs. This value is the worst-case condition with very low IRAMS10UP60B 6 50% t fltclr 7 ...

Page 8

... IRAMS10UP60B Module Pin-Out Description Pin Name W V IN1 H 16 IN2 H 17 IN3 L 18 IN1 L 19 IN2 L 20 IN3 21 FLT/Enable 22 I TRIP Description High Side Floating Supply Voltage 3 Output 3 - High Side Floating Supply Offset Voltage none High Side Floating Supply voltage 2 Output 2 - High Side Floating Supply Offset Voltage ...

Page 9

... Typical Application Connection IRAMS10UP60B DC BUS CAPACITORS +5V PGND +15V +5V 0.1mF 47kohm DGND Temp Monitor CONTROLLER Fault 1K DGND 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve perfor- mance ...

Page 10

... IRAMS10UP60B 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency + V =400V , T 7 150°C J 6.0 Sinusoidal Modulation 5.0 4.0 3.0 2.0 1.0 0.0 1 Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency + V =400V 100° 110°C ...

Page 11

... Figure 6. Total Power Losses vs. Output Phase Current, Sinusoidal modulation V =400V , T BUS www.irf.com = 6 A RMS = 5 A RMS = 4 A RMS PWM Switching Frequency - kHz =150°C, Modulation Depth=0.8, PF=0 Output Phase Current - A RMS =150°C, Modulation Depth=0.8, PF=0.6 J IRAMS10UP60B T = 150°C J Sinusoidal Modulation kHz PWM kHz PWM kHz PWM ...

Page 12

... IRAMS10UP60B 160 150 140 130 120 110 100 150° Sinusoidal Modulation Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase 160 T avg. = 1.2363 150 140 130 120 110 100 Internal Thermistor Temperature Equivalent Read Out - °C Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature ...

Page 13

... Avg. Max Thermistor Temperature - ° +15V COM 3.3µ PWM Frequency - kHz IRAMS10UP60B THERM THERM THERM THERM THERM Ω °C Ω °C Ω 4397119 25 100000 90 7481 3088599 30 79222 95 6337 2197225 35 63167 100 5384 1581881 40 50677 105 4594 1151037 45 40904 110 3934 ...

Page 14

... IRAMS10UP60B Figure 11. Switching Parameter Definitions V CE 50 Figure 11a. Input to Output Propagation turn-on Delay Time Figure 11c. Diode Reverse Recovery 50 OFF Figure 11b. Input to Output Propagation 90 10 turn-off Delay Time www.irf.com ...

Page 15

... Ho Hin1,2,3 IC Driver Lo Lin1,2,3 Figure CT1. Switching Loss Circuit Ho Hin1,2,3 1k 10k Driver Lin1,2,3 5VZD Lo IN Figure CT2. S.C.SOA Circuit Ho Hin1,2,3 1k 10k Driver 5VZD Lin1,2 Figure CT3. R.B.SOA Circuit www.irf.com + V U,V U,V U,V IRAMS10UP60B ...

Page 16

... IRAMS10UP60B Package Outline 027-E2D24 IRAMS10UP60B note 1 Standard pin leadforming option Notes: Dimensions Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking 4- Tollerances ±0.5mm, unless otherwise stated For mounting instruction, see AN1049 16 note 3 note 2 www.irf.com ...

Page 17

... Tollerances ±0.5mm, unless otherwise stated IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRAMS10UP60B note 3 For mounting instruction see AN-1049 Data and Specifications are subject to change without notice Visit us at www.irf.com for sales contact information TAC Fax: (310) 252-7903 ...

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