MCC95-12IO1B IXYS, MCC95-12IO1B Datasheet - Page 4

THYRISTOR MODULE 1200V 2X116A

MCC95-12IO1B

Manufacturer Part Number
MCC95-12IO1B
Description
THYRISTOR MODULE 1200V 2X116A
Manufacturer
IXYS
Type
SCR Moduler
Datasheet

Specifications of MCC95-12IO1B

Structure
Series Connection - All SCRs
Number Of Scrs, Diodes
2 SCRs
Voltage - Off State
1200V
Current - Gate Trigger (igt) (max)
150mA
Current - On State (it (av)) (max)
116A
Current - On State (it (rms)) (max)
180A
Current - Non Rep. Surge 50, 60hz (itsm)
2250A, 2400A
Current - Hold (ih) (max)
200mA
Mounting Type
Chassis Mount
Package / Case
TO-240AA
Repetitive Peak Off-state Volt
1.2kV
Off-state Voltage
1.2kV
Average On-state Current
116A
Hold Current
200mA
Gate Trigger Current (max)
150mA
Gate Trigger Voltage (max)
2.5V
Peak Reverse Gate Voltage
10V
Package Type
TO-240AA
Peak Repeat Off Current
5mA
Peak Surge On-state Current (max)
2400A
On State Voltage(max)
1.5@300AV
Mounting
Screw
Pin Count
7
Operating Temp Range
-40C to 125C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCC95-12IO1B
Manufacturer:
FUJI
Quantity:
300
Part Number:
MCC95-12IO1B
Quantity:
60
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
I
P
[W]
[A]
P
[W]
TSM
tot
tot
3000
2500
2000
1500
1000
1000
500
250
200
150
100
800
600
400
200
50
0.001
0
0
0
0
0
Fig. 3 Surge overload current I
I
FSM
100
50
0.01
: Crest value, t: duration
I
TAVM
I
dAVM
, I
t [s]
100
200
FAVM
[A]
50 Hz
80% V
T
T
0.1
Circuit
B6
3x MCC95 or
3x MCD95
VJ
VJ
[A]
= 45°C
= 125°C
150
300
DC
180° sin
120°
60°
30°
RRM
TSM
1
,
0
0
[A
I
2
2
t
s]
10
10
5
4
1
Fig. 4 I
V
R
= 0 V
50
50
2
t versus time (1-10 ms)
T
VJ
T
= 45°C
T
a
a
T
VJ
[°C]
[°C]
t [ms]
= 125°C
100
100
R
0.4
0.6
0.8
1
1.2
1.5
2
3
thKA
R
0.03
0.06
0.08
0.12
0.15
0.3
0.5
thKA
K/W
10
K/W
I
150
150
TAVM
[A]
250
200
150
100
50
0
0
Fig. 4a Maximum forward current
Fig. 5 Power dissipation versus
Fig. 6 Three phase rectifier bridge:
25
on-state current & ambient
temperature
(per thyristor or diode)
Power dissipation vs. direct
output current and ambient
temperature
at case temperature
50
T
75
C
[°C]
100
MCC 95
MCD 95
DC
180° sin
120°
60°
30°
125
20101116a
4 - 5
150

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