IRKL26/04A Vishay, IRKL26/04A Datasheet - Page 2
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IRKL26/04A
Manufacturer Part Number
IRKL26/04A
Description
SCR DBL HISCR 400V 27A ADD-A-PAK
Manufacturer
Vishay
Datasheet
1.IRKH2604A.pdf
(8 pages)
Specifications of IRKL26/04A
Structure
Series Connection - SCR/Diode
Number Of Scrs, Diodes
1 SCR, 1 Diode
Voltage - Off State
400V
Current - Gate Trigger (igt) (max)
150mA
Current - On State (it (av)) (max)
27A
Current - On State (it (rms)) (max)
60A
Current - Non Rep. Surge 50, 60hz (itsm)
400A, 420A
Current - Hold (ih) (max)
200mA
Mounting Type
Chassis Mount
Package / Case
ADD-A-PAK (3 + 2)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRKL26/04A
IRKL26/04
IRKL26/04
IRKL26/04
IRKL26/04
IRK.26 Series
Bulletin I27130 rev. G 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
2
On-state Conduction
I
I
I
I
or
I
I
I
V
r
V
V
di/dt
I
I
(1) I
(4) I >
T(AV)
F(AV)
O(RMS
TSM
FSM
2
2
H
L
t
t
T(TO)
TM
FM
t
IRK.26
Type number
2
t for time t
)
Parameters
Max. average on-state
current (Thyristors)
Max. average forward
current (Diodes)
Max. continuous RMS
on-state current.
As AC switch
Max. peak, one cycle
non-repetitive on-state
or forward current
Max. I
Max. I
Max. value of threshold
voltage (2)
Max. value of on-state
slope resistance (2)
Max. peak on-state or
forward voltage
Max. non-repetitive rate
of rise of turned on
current
Max. holding current
Max. latching current
x I
AV
2
2
t for fusing
x
t for fusing (1)
=
I
2
t x t
x
Voltage
Code
04
06
08
10
12
14
16
-
(2) Average power
peak reverse voltage peak reverse voltage
V
RRM
repetitive
IRK.26
, maximum
12.11
11.82
1000
1200
1400
1600
1100
1000
8000
1.95
0.92
0.95
400
600
800
400
420
335
350
470
490
800
730
560
510
150
200
400
60
27
27
V
=
V
T(TO)
x I
T(AV)
V
+
A/µs
RSM
non-repetitive
Units
A
r
A
m
mA
t
2
2
V
V
x (I
A
s
s
, maximum
1100
1300
1500
1700
500
700
900
T(RMS)
V
180
T
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t= 0.1 to 10ms, no voltage reappl. T
Low level (3)
High level (4)
Low level (3)
High level (4)
I
I
T
I
t
T
resistive load, gate open circuit
T
Conditions
TM
FM
TM
r
)
C
J
J
J
< 0.5 µs, t
2
= 25
= 25
= 25
= 85
= x I
= x I
= x I
o
conduction, half sine wave,
o
o
o
o
C, anode supply = 6V, resistive load
C, anode supply = 6V,
C
C, from 0.67 V
T(AV)
F(AV)
T(AV)
(3) 16.7% x
peak off-state voltage,
V
No voltage
100% V
No voltage
100% V
reapplied
reapplied
T
no voltage reapplied
reapplied
reapplied
T
no voltage reapplied
p
DRM
J
J
> 6 µs
gate open circuit
= 25
= 25
,
I
(RMS)
I
g
, max. repetitive
o
o
= 500mA,
C,
C,
RRM
RRM
1000
1200
1400
1600
400
600
800
or
V
DRM
x I
Initial T
T
T
T
AV
,
J
J
Initial T
J
= 25
= T
= T
< I <
half wave,
Sinusoidal
J
J
J
o
www.irf.com
J
=T
max
C
max
= T
J
= T
J
x I
max
J
max.
AV
J
125°C
max.
I
I
mA
RRM
DRM
I
15
(RMS)