IRKL26/04A Vishay, IRKL26/04A Datasheet - Page 3
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IRKL26/04A
Manufacturer Part Number
IRKL26/04A
Description
SCR DBL HISCR 400V 27A ADD-A-PAK
Manufacturer
Vishay
Datasheet
1.IRKH2604A.pdf
(8 pages)
Specifications of IRKL26/04A
Structure
Series Connection - SCR/Diode
Number Of Scrs, Diodes
1 SCR, 1 Diode
Voltage - Off State
400V
Current - Gate Trigger (igt) (max)
150mA
Current - On State (it (av)) (max)
27A
Current - On State (it (rms)) (max)
60A
Current - Non Rep. Surge 50, 60hz (itsm)
400A, 420A
Current - Hold (ih) (max)
200mA
Mounting Type
Chassis Mount
Package / Case
ADD-A-PAK (3 + 2)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRKL26/04A
IRKL26/04
IRKL26/04
IRKL26/04
IRKL26/04
Triggering
Blocking
Thermal and Mechanical Specifications
(The following table shows the increment of thermal resistance R
www.irf.com
P
P
I
-V
V
I
T
T
R
R
T
wt
I
I
V
dv/dt Max. critical rate of rise
V
I
(5) Available with dv/dt = 1000V/ s, to complete code add S90 i.e. IRKT26/16AS90.
GM
GD
R Conduction (per Junction)
GT
RRM
DRM
Devices
GM
G(AV)
GD
J
stg
thJC
thCS
GT
INS
IRK.26
GM
Max. peak gate power
Max. average gate power
Max. peak gate current
Max. peak negative
gate voltage
Max. gate voltage
required to trigger
Max. gate current
required to trigger
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
Parameters
Parameters
Max. peak reverse and
off-state leakage current
at V
RMS isolation voltage
Parameters
Junction operating
temperature range
Storage temp. range
Max. internal thermal
resistance, junction
to case
Typical thermal resistance
case to heatsink
Mounting torque ± 10%
Approximate weight
Case style
RRM
180
0.23
, V
DRM
o
120
0.27
to heatsink
busbar
Sine half wave conduction
o
0.34
90
o
0.48
60
2500 (1 min)
3500 (1 sec)
o
- 40 to 125
TO-240AA
- 40 to 125
IRK. 26
IRK. 26
IRK.26
110 (4)
270
150
2.5
2.5
4.0
2.5
1.7
0.25
0.31
10
80
500
10
0.1
15
6
5
3
0.73
30
thJC
o
when devices operate at different conduction angles than DC)
180
0.17
o
Units
Units
Units
gr (oz)
mA
V/ s
K/W
mA
mA
Nm
A
W
V
°C
V
V
120
0.28
Rect. wave conduction
o
T
rated V
T
rated V
Conditions
T
T
T
T
T
T
Conditions
Conditions
T
50 Hz, circuit to base, all terminals
shorted
T
Mounting surface flat, smooth and greased
Per module, DC operation
JEDEC
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
J
J
J
J
J
J
J
J
J
J
= 125
= 125
= - 40°C
= 25°C
= 125°C
= - 40°C
= 25°C
= 125°C
= 125
= 125
0.36
90
o
DRM
DRM
o
o
C,
C,
o
o
C, gate open circuit
C, linear to 0.67 V
Bulletin I27130 rev. G 10/02
applied
applied
0.49
60
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
o
IRK.26 Series
0.73
30
DRM
o
,
Units
°C/W
3