IRKU56/12A Vishay, IRKU56/12A Datasheet - Page 2

• Manufacturer Part Number: IRKU56/12A
• Description: SCR CC 2SCR 1200V 55A ADD-A-PAK
• Manufacturer: Vishay

Specifications of IRKU56/12A

• Structure: Common Anode - All SCRs
• Number Of Scrs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - Gate Trigger (igt) (max): 150mA
• Current - On State (it (av)) (max): 60A
• Current - On State (it (rms)) (max): 95A
• Current - Non Rep. Surge 50, 60hz (itsm): 580A, 890A
• Current - Hold (ih) (max): 200mA
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRKU56/12A; IRKU56/12; IRKU56/12; VS-IRKU56/12A; VS-IRKU56/12A; VSIRKU56/12A; VSIRKU56/12A

Bulletin I27134 rev. E 10/02
IRKU/V41, 56 Series
On-state Conduction
2
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
I
I
I
I
V
r
V
di/dt
I
I
(1) I
(3) 16.7%
T(RMS
TSM
H
L
T(AV)
2
2
t
TM
t
T(TO)
t
Type number
IRKU/V41, 56
2
)
t for time t
Parameters
Max. average on-state
current
Max. RMS on-state
current
Max. peak, one cycle
non-repetitive on-state
current
Max. I
Max. I
Max. value of threshold
voltage (2)
Max. value of on-state
slope resistance (2)
Max. peak on-state
voltage
Max. non-repetitive rate
of rise of turned on
current
Max. holding current
Max. latching current
x
2
2
t for fusing
t for fusing (1)
x I
x
AV
= I
< I <
2
t
x
@ T
x I
Voltage
t
x
Code
AV
C
.
04
08
12
16
-
(2) Average power =
(4)
IRKU/V41
1.81
3.61
3.30
2.56
2.33
4.42
4.03
36.1
0.88
0.91
5.90
5.74
850
890
715
750
940
985
45
70
82
I >
peak reverse voltage peak reverse voltage
V
RRM
x I
150
200
400
repetitive
AV
, maximum
1200
1600
400
800
V
IRKU/V56
10.05
1310
1100
1150
1450
1520
1370
8.56
7.82
6.05
5.53
9.60
85.6
0.85
0.88
3.53
3.41
1.54
60
95
80
V
T(TO)
x I
T(AV)
V
RSM
non-repetitive
KA
KA
Units
m
A/µs
mA
°C
A
V
A
V
+
2
2
, maximum
1300
1700
s
500
900
s
r
t
V
x
(
I
T(RMS)
t=10ms
t=8.3ms reapplied
t=10ms
t=8.3ms reapplied
t=10ms
t=8.3ms no voltage reapplied
t=10ms
t=8.3ms reapplied
t=10ms
t=8.3ms reapplied
t=10ms
t=8.3ms no voltage reapplied
180
T
DC
t=0.1 to 10ms, no voltage reapplied
Low level (3)
High level (4)
Low level (3)
High level (4)
I
I
T
I
t
T
resistive load, gate open circuit
T
Conditions
TM
FM
TM
r
C
J
J
J
< 0.5 µs, t
= 25
= 25
= 25
= 85
= x I
= x I
= x I
o
)
conduction, half sine wave,
2
o
o
o
o
C, anode supply = 6V,
C
C, anode supply = 6V,resistive load
C, from 0.67 V
peak off-state voltage,
T(AV)
F(AV)
V
T(AV)
No voltage
100% V
T
No voltage
100% V
T
DRM
J
J
gate open circuit
p
= 25
= 25
> 6 µs
,
, max. repetitive
I
g
o
o
C,
C,
RRM
RRM
= 500mA,
1200
1600
400
800
V
DRM
Initial T
Initial T
T
,
T
T
J
J
J
= T
= T
= 25°C
Sinusoidal
half wave,
www.irf.com
J
J
J
J
max
max
= T
= T
125°C
J
J
I
I
mA
max.
RRM
DRM
max.
15