IRKU56/12A Vishay, IRKU56/12A Datasheet - Page 3

• Manufacturer Part Number: IRKU56/12A
• Description: SCR CC 2SCR 1200V 55A ADD-A-PAK
• Manufacturer: Vishay

Specifications of IRKU56/12A

• Structure: Common Anode - All SCRs
• Number Of Scrs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - Gate Trigger (igt) (max): 150mA
• Current - On State (it (av)) (max): 60A
• Current - On State (it (rms)) (max): 95A
• Current - Non Rep. Surge 50, 60hz (itsm): 580A, 890A
• Current - Hold (ih) (max): 200mA
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRKU56/12A; IRKU56/12; IRKU56/12; VS-IRKU56/12A; VS-IRKU56/12A; VSIRKU56/12A; VSIRKU56/12A

Triggering
Blocking
Thermal and Mechanical Specifications
www.irf.com
(The following table shows the increment of thermal resistance R
V
dv/dt Max. critical rate of rise
(5) Available with dv/dt = 1000V/ s, to complete code add S90 i.e. IRKU41/16AS90.
T
T
R
R
T
wt
P
P
I
-V
V
I
V
I
I
I
IRKU/V41
IRKU/V56
R Conduction (per Junction)
GM
GT
GD
RRM
DRM
Devices
stg
J
INS
thJC
thCS
GM
G(AV)
GT
GD
GM
Parameters
Max. peak gate power
Max. average gate power
Max. peak gate current
Max. peak negative
gate voltage
Max. gate voltage
required to trigger
Max. gate current
required to trigger
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
Parameters
Max. peak reverse and
off-state leakage current
at V
RMS isolation voltage
of off-state voltage (5)
Parameters
Junction operating
temperature range
Storage temper. range
Max. internal thermal
resistance, junction
to case
Typical thermal resistance
case to heatsink
Mounting torque ± 10%
Approximate weight
Case style
RRM
, V
180
0.11
0.09
DRM
o
to heatsink
busbar
120
0.13
0.11
Sine half wave conduction
o
IRKU/V41
IRKU/V41
0.17
0.13
90
o
0.23
2.5
2.5
10
IRKU/V41, 56
2500 (1 min)
3500 (1 sec)
TO-240AA
- 40 to 125
- 40 to 125
0.23
0.18
110 (4)
60
0.25
270
150
500
4.0
2.5
1.7
0.1
80
10
o
3
15
6
5
IRKU/V56
IRKU/V56
0.34
0.27
30
0.20
thJC
2.5
2.5
10
o
when devices operate at different conduction angles than DC)
180
0.09
0.07
o
Units
g (oz)
K/W
Units
Units
V/ s
Nm
mA
mA
W
mA
°C
V
V
A
V
120
0.14
0.11
Rect. wave conduction
o
Conditions
Per module, DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
T
rated V
T
rated V
T
50 Hz, circuit to base, all terminals
shorted
T
gate open circuit
JEDEC
Conditions
T
T
T
T
T
T
Conditions
J
J
J
J
J
J
J
J
J
J
0.18
0.14
= 125
= 125
= 125
90
= - 40°C
= 25°C
= 125°C
= - 40°C
= 25°C
= 125
= 125°C
o
DRM
DRM
o
o
C,
C,
o
o
Bulletin I27134 rev. E 10/02
C, linear to 0.67 V
C, gate open circuit
IRKU/V41, 56 Series
applied
applied
0.23
0.19
60
o
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
0.34
0.28
30
o
DRM
,
Units
°C/W
3