MCP2004-E/P Microchip Technology, MCP2004-E/P Datasheet - Page 14

• Manufacturer Part Number: MCP2004-E/P
• Description: IC LIN BUS BIDIRECT 8PDIP
• Manufacturer: Microchip Technology

Specifications of MCP2004-E/P

• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Operating Supply Voltage: 6 V to 27 V
• Package / Case: PDIP-8
• Supply Current: 90 uA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

MCP2003/4
2.4
DS22230C-page 14
AC CHARACTERISTICS
Bus Interface – Constant Slope Time Parameters
Slope Rising and Falling
Edges
Propagation Delay of
Transmitter
Propagation Delay of
Receiver
Symmetry of Propagation
Delay of Receiver Rising
Edge w.r.t. Falling Edge
Symmetry of Propagation
Delay of Transmitter Rising
Edge w.r.t. Falling Edge
Time to Sample of FAULT/
TXE for Bus Conflict Report-
ing
Duty Cycle 1 @20.0 kbit/sec
Duty Cycle 2 @20.0 kbit/sec
Duty Cycle 3 @10.4 kbit/sec
Duty Cycle 4 @10.4 kbit/sec
Wake-up Timing
Bus Activity Debounce time
Bus Activity to Vren on
WAKE to Vren on
Chip Select to Vren on
Chip Select to Vren off
AC Specifications
Parameter
V
tBACTVE
ttranspd
trecsym
tWAKE
tCSOR
BB
tCSPD
ttrans-
trecpd
tslope
tBDB
tfault
Sym
sym
= 6.0V to 27.0V; T
Min.
.396
.417
-2.0
-2.0
3.5
35
—
—
—
—
—
—
—
5
Typ.
—
—
—
—
—
—
—
—
—
—
A
= -40°C to +125°C
Max.
22.5
32.5
.581
.590
150
150
150
4.0
6.0
2.0
2.0
20
80
—
—
Units
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
7.3V <= V
ttranspd = max (ttranspdr or ttranspdf)
trecpd = max (trecpdr or trecpdf)
trecsym = max (trecpdf – trecpdr)
R
ttranssym = max (ttranspdf - ttranspdr)
tfault = max (ttranspd + tslope + trecpd)
Cbus; Rbus conditions:
1 nF; 1 k | 6.8 nF; 660 | 10 nF; 500
THrec(max) = 0.744 x V
THdom(max) = 0.581 x V
V
D1 = tbus_rec(min)/2 x tbit)
Cbus; Rbus conditions:
1 nF; 1 k | 6.8 nF; 660 | 10 nF; 500
THrec(max) = 0.284 x V
THdom(max) = 0.422 x V
V
D2 = tbus_rec(max)/2 x tbit)
Cbus; Rbus conditions:
1 nF; 1 k | 6.8 nF; 660 | 10 nF; 500
THrec(max) = 0.778 x V
THdom(max) = 0.616 x V
V
D3 = tbus_rec(min)/2 x tbit)
Cbus; Rbus conditions:
1 nF; 1 k | 6.8 nF; 660 | 10 nF; 500
THrec(max) = 0.251 x V
THdom(max) = 0.389 x V
V
D4 = tbus_rec(max)/2 x tbit)
Bus debounce time, 10 µs typical
After Bus debounce time, 52 µs typical
Vren floating
Vren floating
RXD
BB
BB
BB
BB
=7.0V – 18V; tbit = 50 µs
=7.6V – 18V; tbit = 50 µs
=7.0V – 18V; tbit = 96 µs
=7.6V – 18V; tbit = 96 µs
2.4
BB
TO
<= 18V
Test Conditions
 2010 Microchip Technology Inc.
V
CC
, C
RXD
BB
BB
BB
BB
BB
BB
BB
BB
20
,
,
,
,
,
,
,
,
P
F