NTD5862NT4G ON Semiconductor, NTD5862NT4G Datasheet
NTD5862NT4G
Specifications of NTD5862NT4G
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NTD5862NT4G Summary of contents
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NTD5862N N-Channel Power MOSFET 5.7 mW Features • Low R DS(on) • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (T = 25°C unless ...
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... Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Order Number NTD5862N−1G NTD5862NT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) ...
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T = 25° 160 120 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.030 0.025 0.020 0.015 0.010 0.005 0.000 ...
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C iss 5000 4000 3000 2000 C 1000 oss C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...
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Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 TYPICAL CHARACTERISTICS 0.001 0.01 t, PULSE TIME (s) Figure 13. Thermal Response http://onsemi.com 5 0 ...
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... DETAIL 0.005 (0.13 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE GAUGE SEATING L2 C PLANE PLANE DETAIL A ROTATED SOLDERING FOOTPRINT* 6.20 3 ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...