NTD5862NT4G ON Semiconductor, NTD5862NT4G Datasheet - Page 4

• Manufacturer Part Number: NTD5862NT4G
• Description: NFET 60V 102A 6MOHM DPAK-3
• Manufacturer: ON Semiconductor

Specifications of NTD5862NT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 45A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 82nC @ 10V
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 96W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS non-compliant

1000
1000
6000
5000
4000
3000
2000
1000
100
100
0.1
10
10
1
1
0
0
0.1
1
C
V
I
V
V
SINGLE PULSE
T
D
Figure 9. Resistive Switching Time Variation
Figure 11. Maximum Rated Forward Biased
rss
DD
GS
C
GS
= 45 A
= 25°C
t
d(off)
= 48 V
= 10 V
= 10 V
V
V
10
DS
DS
t
t
Figure 7. Capacitance Variation
r
f
, DRAIN−TO−SOURCE VOLTAGE (V)
C
, DRAIN−TO−SOURCE VOLTAGE (V)
oss
R
dc
G
R
THERMAL LIMIT
PACKAGE LIMIT
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
DS(on)
10 ms
20
1
1 ms
LIMIT
C
iss
30
10
100 ms
40
10
10 ms
TYPICAL CHARACTERISTICS
V
T
t
50
GS
J
d(on)
= 25°C
http://onsemi.com
= 0 V
60
100
100
4
210
180
150
120
100
10
90
60
30
80
60
40
20
9
8
7
6
5
4
3
2
1
0
0
0.50
0
25
0
Figure 12. Maximum Avalanche Energy versus
Figure 10. Diode Forward Voltage vs. Current
V
T
Figure 8. Gate−to−Source vs. Total Charge
GS
J
= 25°C
10
Q
= 0 V
T
gs
V
0.60
J
SD
, STARTING JUNCTION TEMPERATURE
50
Starting Junction Temperature
, SOURCE−TO−DRAIN VOLTAGE (V)
20
Q
g
, TOTAL GATE CHARGE (nC)
0.70
30
75
Q
gd
40
Q
T
0.80
50
100
0.90
60
V
I
T
70
I
D
D
125
J
DS
= 45 A
1.00
= 25°C
= 37 A
= 48 V
80
1.10
150
90