NTMD4N03R2G ON Semiconductor, NTMD4N03R2G Datasheet

NTMD4N03R2G

Manufacturer Part Number

NTMD4N03R2G

Description

MOSFET PWR N-CH DL 4A 30V 8SOIC

Manufacturer

ON Semiconductor

Datasheets

1.NTMD4N03R2G.pdf (8 pages)

2.NTMD4N03R2G.pdf (8 pages)

Specifications of NTMD4N03R2G

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

60 mOhm @ 4A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

16nC @ 10V

Input Capacitance (ciss) @ Vds

400pF @ 20V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Configuration

Dual Dual Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.048 Ohms

Forward Transconductance Gfs (max / Min)

6 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

4 A

Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTMD4N03R2GOS
NTMD4N03R2GOS
NTMD4N03R2GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTMD4N03R2G

Manufacturer:

Quantity:

70 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTMD4N03R2G

Manufacturer:

ON/安森美

Quantity:

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Company:

H&T Electronics

Part Number:

NTMD4N03R2G

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Company:

H&T Electronics

Part Number:

NTMD4N03R2G

Quantity:

153

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NTMD4N03R2

Power MOSFET

4 Amps, 30 Volts

N−Channel SO−8 Dual

Features

•

Applications

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. When surface mounted to an FR4 board using 1″ pad size, t ≤ 10 s

MAXIMUM RATINGS

February, 2006 − Rev. 2

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Drain Current

Total Power Dissipation

Operating and Storage

Single Pulse Drain−to−Source

Thermal Resistance

Maximum Lead Temperature for

Higher Efficiency and Extends Battery Life

Designed for use in low voltage, high speed switching applications

Ultra Low On−Resistance Provides

Miniature SO−8 Surface Mount Package − Saves Board Space

Diode is Characterized for Use in Bridge Circuits

Diode Exhibits High Speed, with Soft Recovery

Pb−Free Package is Available

DC−DC Converters

Computers

Printers

Cellular and Cordless Phones

Disk Drives and Tape Drives

− Continuous @ T

− Single Pulse (tp ≤ 10 ms)

@ T

Temperature Range

Avalanche Energy − Starting T

Peak I

− Junction−to−Ambient (Note 1)

Soldering Purposes for 10 seconds

− R

= 25 W)

DS(on)

= 25 Vdc, V

= 25°C (Note 1)

= 4.45 Apk, L = 8 mH,

= 0.048 W, V

= 0.065 W, V

Rating

= 25°C

= 5.0 Vdc,

= 25°C unless otherwise noted)

= 10 V (Typ)

= 4.5 V (Typ)

= 25°C

Symbol

, T

DSS

qJA

stg

−55 to

Value

+150

"20

62.5

260

4.0

2.0

°C/W

Unit

Adc

Apk

°C

†For information on tape and reel specifications,

NTMD4N03R2

NTMD4N03R2G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D

*For additional marking information, refer to

SUFFIX NB

(Note: Microdot may be in either location)

CASE 751

STYLE 11

Application Note AND8002/D.

Device

30 V

SOIC−8

DSS

E4N03 = Specific Device Code

ORDERING INFORMATION

http://onsemi.com

48 mW @ V

= Assembly Location

= Year

= Work Week

= Pb−Free Package

N−Channel

AND PIN ASSIGNMENT

(Pb−Free)

DS(ON)

MARKING DIAGRAM*

Package

SOIC−8

Publication Order Number:

D1 D1 D2 D2

S1 G1 S2 G2

Typ

AYWW G

= 10 V

E4N03

2500/Tape & Reel

NTMD4N03R2/D

Shipping

4.0 A

Max

†

Related parts for NTMD4N03R2G

NTMD4N03R2G Summary of contents

Page 1

... AS *For additional marking information, refer to R 62.5 °C/W qJA NTMD4N03R2 T 260 °C L NTMD4N03R2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D 1 http://onsemi.com V R Typ I Max ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc 250 mA Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc 25° ...

Page 3

TYPICAL MOSFET ELECTRICAL CHARACTERISTICS 4 0.2 0.4 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0. ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

... RR Compared to ON Semiconductor standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter t reverse recovery characteristic. The softness advantage of the high cell density diode means they can be forced through ...

Page 6

The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (T ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E−05 1.0E−04 1.0E− Figure 14. Diode Reverse Recovery Waveform 0.0106 W 0.0431 W CHIP JUNCTION 0.0253 F 0.1406 F 1.0E−02 1.0E−01 ...

Page 8

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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