NTMD4N03R2G ON Semiconductor, NTMD4N03R2G Datasheet

NTMD4N03R2G

Manufacturer Part Number

NTMD4N03R2G

Description

MOSFET PWR N-CH DL 4A 30V 8SOIC

Manufacturer

ON Semiconductor

Datasheets

1.NTMD4N03R2G.pdf (8 pages)

2.NTMD4N03R2G.pdf (8 pages)

Specifications of NTMD4N03R2G

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

60 mOhm @ 4A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

16nC @ 10V

Input Capacitance (ciss) @ Vds

400pF @ 20V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Configuration

Dual Dual Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.048 Ohms

Forward Transconductance Gfs (max / Min)

6 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

4 A

Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTMD4N03R2GOS
NTMD4N03R2GOS
NTMD4N03R2GOSTR

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NTMD4N03R2

Power MOSFET

4 Amps, 30 Volts

N−Channel SO−8 Dual

Features

Applications

1. When surface mounted to an FR4 board using 1 pad size, t

MAXIMUM RATINGS

May, 2004 − Rev. 1

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Drain Current

Total Power Dissipation

Operating and Storage Temperature

Single Pulse Drain−to−Source Avalanche

Thermal Resistance

Maximum Lead Temperature for Soldering

Higher Efficiency and Extends Battery Life

Designed for use in low voltage, high speed switching applications

Ultra Low On−Resistance Provides

Miniature SO−8 Surface Mount Package − Saves Board Space

Diode is Characterized for Use in Bridge Circuits

Diode Exhibits High Speed, with Soft Recovery

Dc−Dc Converters

Computers

Printers

Cellular and Cordless Phones

Disk Drives and Tape Drives

Semiconductor Components Industries, LLC, 2004

− Continuous @ T

− Single Pulse (tp

@ T

Range

Energy − Starting T

Peak I

− Junction−to−Ambient (Note 1)

Purposes for 10 seconds

− R

= 25 )

DS(on)

= 25 Vdc, V

= 25 C (Note 1)

= 4.45 Apk, L = 8 mH,

= 0.048 W, V

= 0.065 W, V

Rating

= 25 C

10 ms)

= 5.0 Vdc,

= 25 C

= 25 C unless otherwise noted)

= 10 V (Typ)

= 4.5 V (Typ)

Symbol

, T

DSS

qJA

stg

−55 to

Value

+150

"20

62.5

260

4.0

2.0

10 s

Watts

Volts

Unit

Adc

Apk

C/W

†For information on tape and reel specifications,

NTMD4N03R2

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

30 V

DSS

Source−1

Source−2

Device

Gate−1

Gate−2

ORDERING INFORMATION

E4N03

& PIN ASSIGNMENTS

MARKING DIAGRAM

http://onsemi.com

48 m @ V

N−Channel

CASE 751

(Top View)

STYLE 11

DS(ON)

Package

= Device Code

= Assembly Location

= Year

= Work Week

SO−8

Publication Order Number:

TYP

= 10 V

2500/Tape & Reel

NTMD4N03R2/D

Drain−1

Drain−2

Shipping

4.0 A

MAX

†

Related parts for NTMD4N03R2G

NTMD4N03R2G Summary of contents

Page 1

NTMD4N03R2 Power MOSFET 4 Amps, 30 Volts N−Channel SO−8 Dual Features Designed for use in low voltage, high speed switching applications Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life = 0.048 W, V − ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc 250 Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc ...

Page 3

TYPICAL MOSFET ELECTRICAL CHARACTERISTICS 4 0.2 0.4 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0. ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are determined by how fast the FET input capacitance can be charged by current from ...

Page 5

... RR Compared to ON Semiconductor standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter t reverse recovery characteristic. The softness advantage of the high cell density diode means they can be forced through ...

Page 6

The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (T ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E−05 1.0E−04 1.0E− Figure 14. Diode Reverse Recovery Waveform NTMD4N03R2 0.0106 W 0.0431 W CHIP JUNCTION 0.0253 F 0.1406 F 1.0E−02 ...

Page 8

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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