NTMD4N03R2G ON Semiconductor, NTMD4N03R2G Datasheet - Page 3

• Manufacturer Part Number: NTMD4N03R2G
• Description: MOSFET PWR N-CH DL 4A 30V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD4N03R2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.048 Ohms
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMD4N03R2GOS; NTMD4N03R2GOS; NTMD4N03R2GOSTR

1.375
1.125
0.875
0.025
0.075
1.25
0.75
0.10
0.05
8
6
4
2
0
1.5
0
1
0
−50
2
Figure 3. On−Resistance versus Drain Current
5 V
V
DS
6 V
Figure 1. On−Region Characteristics
−25
I
V
V
D
Figure 5. On−Resistance Variation with
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
GS
= 2 A
0.2
8 V
3
= 10 V
= 10
T
J
10 V
, JUNCTION TEMPERATURE ( C)
I
0
D
, DRAIN CURRENT (AMPS)
4
and Temperature
0.4
25
Temperature
T = 125 C
T = −55 C
TYPICAL MOSFET ELECTRICAL CHARACTERISTICS
T = 25 C
50
5
0.6
4 V
4.5 V
75
6
T
J
= 25 C
100
0.8
V
GS
3.6 V
7
= 3 V
http://onsemi.com
125
NTMD4N03R2
1.0
150
8
3
10,000
1000
0.10
0.08
0.06
0.04
0.02
100
10
7
6
5
4
3
2
1
0
0
2
0
0
Figure 4. On−Resistance versus Drain Current
Figure 6. Drain−to−Source Leakage Current
V
V
DS
T
V
V
GS
J
DS
GS
= 25 C
Figure 2. Transfer Characteristics
3
= 0 V
5
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10 V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
1
I
D
, DRAIN CURRENT (AMPS)
T
T
J
J
10
and Gate Voltage
4
= 125 C
= 25 C
versus Voltage
T
T
J
J
2
V
V
= 150 C
= 125 C
GS
GS
15
= 4.5 V
= 10 V
5
T
J
3
= −55 C
20
6
4
25
7
30
8
5