IRLR6225PBF International Rectifier, IRLR6225PBF Datasheet - Page 2

• Manufacturer Part Number: IRLR6225PBF
• Description: MOSFET N-CH 20V 100A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR6225PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 21A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.1V @ 50µA
• Gate Charge (qg) @ Vgs: 72nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3770pF @ 10V
• Power - Max: 63W
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 3200µohm
• Rds(on) Test Voltage Vgs: 4.5V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 100 A
• Power Dissipation: 63 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 48 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLR6225PbF
R
R
R
Thermal Resistance
∆ΒV
∆V
Static @ T
BV
R
V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
Avalanche Characteristics
E
I
E
Diode Characteristics
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
θJC
θJA
θJA
GS(th)
AS
AR
SD
DS(on)
g
Q
Q
Q
Q
sw
oss
G
iss
oss
rss
rr
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C (unless otherwise specified)
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
Ù
h
Parameter
Parameter
gs2
™
+ Q
gd
)
™
g
Parameter
Time is dominated by parasitic Inductance
Min.
Min.
–––
–––
–––
–––
–––
–––
–––
–––
205
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.5
20
g
3770
Typ.
Typ.
-4.0
–––
–––
–––
–––
–––
–––
915
650
–––
–––
–––
6.6
3.2
4.2
0.8
2.6
3.6
2.2
9.7
48
19
23
23
21
37
63
52
35
57
100
Max. Units
Max. Units
-100
Typ.
–––
––– mV/°C
––– mV/°C
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
400
4.0
5.2
1.1
1.0
1.2
72
53
86
h
mΩ
µA
nA
nC
nC
nC
ns
pF
ns
V
V
S
Ω
A
V
Typ.
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
See Fig.17 & 18
V
V
I
R
See Fig.15
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 200A/µs
–––
–––
–––
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
G
= 17A
= 17A
= 25°C, I
= 25°C, I
=1.8Ω
= V
= 16V, V
= 16V, V
= 10V, I
= 10V
= 16V, V
= 10V
= 0V, I
= 4.5V, I
= 2.5V, I
= 12V
= -12V
= 4.5V
= 10V, V
= 0V
GS
Max.
170
6.3
17
, I
D
S
F
D
D
= 250µA
Conditions
D
D
Conditions
GS
GS
GS
GS
= 17A, V
= 17A, V
= 50µA
= 21A
= 21A
= 17A
Max.
110
2.0
= 0V
= 0V, T
= 0V
50
= 4.5V
eÃ
D
e
e
GS
DD
www.irf.com
= 1mA
G
J
= 125°C
= 0V
= 10V
Units
mJ
mJ
Units
°C/W
A
e
D
S