IRLR6225PBF International Rectifier, IRLR6225PBF Datasheet - Page 3
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IRLR6225PBF
Manufacturer Part Number
IRLR6225PBF
Description
MOSFET N-CH 20V 100A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLR6225PBF.pdf
(8 pages)
Specifications of IRLR6225PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 21A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
1.1V @ 50µA
Gate Charge (qg) @ Vgs
72nC @ 4.5V
Input Capacitance (ciss) @ Vds
3770pF @ 10V
Power - Max
63W
Mounting Type
Surface Mount
Package / Case
*
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
3200µohm
Rds(on) Test Voltage Vgs
4.5V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
D-PAK
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
4 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
100 A
Power Dissipation
63 W
Mounting Style
SMD/SMT
Gate Charge Qg
48 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
100000
10000
1000
1000
1000
100
100
0.1
100
10
10
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
1
0.0
0.1
1
T J = 150°C
C rss
C oss
C iss
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1.0
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
1.5V
1
T J = 25°C
2.0
f = 1 MHZ
≤ 60µs PULSE WIDTH
Tj = 25°C
V DS = 10V
≤60µs PULSE WIDTH
10
3.0
10
TOP
BOTTOM
4.0
VGS
10V
4.5V
3.5V
3.0V
2.3V
2.0V
1.8V
1.5V
100
5.0
100
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
14.0
12.0
10.0
10
8.0
6.0
4.0
2.0
0.0
1
1.6
1.4
1.2
1.0
0.8
0.6
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
I D = 17A
I D = 42A
V GS = 4.5V
V DS , Drain-to-Source Voltage (V)
V DS = 16V
V DS = 10V
V DS = 4.0V
T J , Junction Temperature (°C)
25
Q G , Total Gate Charge (nC)
1.5V
1
IRLR6225PbF
50
≤ 60µs PULSE WIDTH
Tj = 150°C
75
10
TOP
BOTTOM
100
VGS
10V
4.5V
3.5V
3.0V
2.3V
2.0V
1.8V
1.5V
100
125
3