NTTFS5116PLTAG ON Semiconductor, NTTFS5116PLTAG Datasheet

NTTFS5116PLTAG

Manufacturer Part Number

NTTFS5116PLTAG

Description

MOSFET PWR P-CH 60V 20A 8-WDFN

Manufacturer

ON Semiconductor

Datasheet

1.NTTFS5116PLTWG.pdf (6 pages)

Specifications of NTTFS5116PLTAG

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

52 mOhm @ 6A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

5.7A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

25nC @ 10V

Input Capacitance (ciss) @ Vds

1258pF @ 30V

Power - Max

3.2W

Mounting Type

Surface Mount

Package / Case

8-WSDFN Exposed Pad

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

72 mOhms

Forward Transconductance Gfs (max / Min)

11 s

Drain-source Breakdown Voltage

- 60 V

Continuous Drain Current

- 20 A

Power Dissipation

1.6 W, 3.2 W, 20 W, 40 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Gate Charge Qg

25 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTTFS5116PLTAG

Manufacturer:

ON Semiconductor

Quantity:

Company:

H&T Electronics

Part Number:

NTTFS5116PLTAG

Quantity:

4 500

Company:

H&T Electronics

Part Number:

NTTFS5116PLTAG

Quantity:

1 500

Current page: 1 of 6
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NTTFS5116PL

Power MOSFET

−60 V, −20 A, 52 mW

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

October, 2010 − Rev. 0

MAXIMUM RATINGS

THERMAL RESISTANCE MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

Power Dissipation R

(Note 1)

Continuous Drain

Current R

Power Dissipation

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode)

Single Pulse Drain−to−Source Ava-

lanche Energy

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Junction−to−Case – Steady

State (Note 1)

Junction−to−Ambient – Steady

State (Note 1)

Low R

Fast Switching

These Devices are Pb−Free and are RoHS Compliant

Load Switches

DC Motor Control

DC−DC Conversion

qJC

[2 oz] including traces.

(Note 1)

DS(on)

qJA

qJC

Parameter

(Note 1)

Parameter

qJA

Steady

State

= 25°C unless otherwise stated)

= 10 ms

Symbol

L = 0.1 mH

qJC

qJA

= 100°C

= 25°C

Symbol

DSS

stg

Value

3.8

−55 to

Value

+175

−5.7

−4.0

−60

±20

−20

−14

−76

−20

260

3.2

1.6

°C/W

Unit

°C

NTTFS5116PLTAG

NTTFS5116PLTWG

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

CASE 511AB

(BR)DSS

−60 V

(Note: Microdot may be in either location)

Device

WDFN8

(m8FL)

ORDERING INFORMATION

5116

G (4)

http://onsemi.com

P−Channel MOSFET

72 mW @ −4.5 V

52 mW @ −10 V

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

D (5−8)

DS(on)

(Pb−Free)

Package

WDFN8

MARKING DIAGRAM

Publication Order Number:

MAX

S (1,2,3)

AYWWG

1500/Tape & Reel

5000/Tape & Reel

5116

NTTFS5116PL/D

Shipping

−20 A

MAX

†

Related parts for NTTFS5116PLTAG

NTTFS5116PLTAG Summary of contents

Page 1

... 260 °C L (Note: Microdot may be in either location) Device NTTFS5116PLTAG Value Unit °C/W 3.8 NTTFS5116PLTWG 47 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R MAX I MAX ...

Page 2

ELECTRICAL CHARACTERISTICS (T Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V Drain−to−Source Breakdown Voltage V Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature V Coefficient Drain−to−Source On Resistance Forward ...

Page 3

DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.075 0.065 0.055 0.045 0.035 ...

Page 4

C iss 1200 1000 800 600 400 200 C oss C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 V = − −5 A ...

Page 5

0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 TYPICAL CHARACTERISTICS 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal Response ...

Page 6

... M 0.57 0.75 0.47 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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