NTTFS5116PLTAG ON Semiconductor, NTTFS5116PLTAG Datasheet - Page 4

• Manufacturer Part Number: NTTFS5116PLTAG
• Description: MOSFET PWR P-CH 60V 20A 8-WDFN
• Manufacturer: ON Semiconductor

Specifications of NTTFS5116PLTAG

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 1258pF @ 30V
• Power - Max: 3.2W
• Mounting Type: Surface Mount
• Package / Case: 8-WSDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 72 mOhms
• Forward Transconductance Gfs (max / Min): 11 s
• Drain-source Breakdown Voltage: - 60 V
• Continuous Drain Current: - 20 A
• Power Dissipation: 1.6 W, 3.2 W, 20 W, 40 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 25 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1800
1600
1400
1200
1000
1000
800
600
400
200
100
100
0.1
10
10
0
1
1
1
0.1
0
C
R
Thermal Limit
Package Limit
Figure 9. Resistive Switching Time Variation
V
I
V
Figure 11. Maximum Rated Forward Biased
rss
DS(on)
D
V
Single Pulse
T
DD
GS
C
GS
= −5 A
= 25°C
−V
= −48 V
= −4.5 V
V
= −10 V
t
10
d(on)
DS
Limit
DS
Figure 7. Capacitance Variation
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
R
t
t
G
r
d(off)
Safe Operating Area
vs. Gate Resistance
t
, GATE RESISTANCE (W)
f
20
1
10 ms
dc
1 ms
30
10
C
C
oss
iss
40
10
100 ms
TYPICAL CHARACTERISTICS
10 ms
V
T
J
GS
50
= 25°C
http://onsemi.com
= 0 V
100
100
60
4
10
40
30
20
10
45
30
15
8
6
4
2
0
0
0
25
0.5
0
Figure 10. Diode Forward Voltage vs. Current
Q
Figure 12. Maximum Avalanche Energy vs.
V
Drain−to−Source Voltage vs. Total Charge
T
gs
T
GS
J
J
, STARTING JUNCTION TEMPERATURE (°C)
= 25°C
−V
= 0 V
50
0.6
SD
Starting Junction Temperature
Figure 8. Gate−to−Source and
5
Qg, TOTAL GATE CHARGE (nC)
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
gd
75
0.7
10
Q
100
0.8
T
15
125
0.9
V
I
T
D
J
DS
= −5 A
= 25°C
20
= −48 V
150
1.0
175
1.1
25