NTMFS4925NT3G ON Semiconductor, NTMFS4925NT3G Datasheet - Page 2
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NTMFS4925NT3G
Manufacturer Part Number
NTMFS4925NT3G
Description
MOSFET N-CH 30V 48A SO-8FL
Manufacturer
ON Semiconductor
Datasheet
1.NTMFS4925NT1G.pdf
(7 pages)
Specifications of NTMFS4925NT3G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9.7A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
10.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
1264pF @ 15V
Power - Max
920mW
Mounting Type
Surface Mount
Package / Case
8-TDFN
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
10 mOhms
Forward Transconductance Gfs (max / Min)
52 s
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
16.7 A
Power Dissipation
0.92 W, 2.7 W, 6.16 W, 23.2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
10.8 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTMFS4925NT3G
Manufacturer:
ON/安森美
Quantity:
20 000
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
THERMAL RESISTANCE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES, CAPACITANCES & GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 6)
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Parameter
Parameter
(T
J
= 25°C unless otherwise specified)
V
V
V
Symbol
Q
Q
V
GS(TH)
(BR)DSS
R
t
(BR)DSS
Q
t
d(OFF)
C
C
I
I
d(ON)
GS(TH)
C
G(TOT)
Q
Q
G(TOT)
GSS
DS(on)
DSS
g
G(TH)
T
OSS
RSS
t
t
ISS
FS
GS
GD
r
f
J
/T
http://onsemi.com
/
J
V
V
V
GS
GS
GS
V
V
2
V
V
V
= 4.5 V, V
= 10 V, V
DS
V
GS
= 0 V, f = 1 MHz, V
V
GS
V
GS
GS
V
I
DS
D
GS
GS
DS
= 24 V
= 4.5 V
= 0 V,
= 10 V
= 15 A, R
Test Condition
= 4.5 V, V
= 0 V, V
= V
= 0 V, I
= 1.5 V, I
DS
DS
DS
, I
D
= 15 V; I
GS
= 15 V; I
D
G
DS
= 250 mA
D
= 250 mA
= 3.0 W
= ±20 V
= 15 A
= 15 V,
T
T
DS
J
I
I
I
I
D
D
D
D
J
D
= 125°C
D
= 25°C
= 30 A
= 15 A
= 30 A
= 15 A
= 15 V
= 30 A
= 30 A
Symbol
R
R
R
R
qJC
qJA
qJA
qJA
Min
30
1.2
1264
32.7
16.4
Typ
10.8
21.5
483
143
9.5
6.2
21
1.7
3.9
4.0
4.0
6.4
6.3
2.0
3.8
4.2
52
Value
136.2
46.3
20.3
5.4
±100
Max
1.0
10
2.2
6.0
10
mV/°C
mV/°C
°C/W
Unit
Unit
mW
mA
nA
ns
nC
nC
pF
V
V
S