NTMFS4925NT3G ON Semiconductor, NTMFS4925NT3G Datasheet - Page 4
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NTMFS4925NT3G
Manufacturer Part Number
NTMFS4925NT3G
Description
MOSFET N-CH 30V 48A SO-8FL
Manufacturer
ON Semiconductor
Datasheet
1.NTMFS4925NT1G.pdf
(7 pages)
Specifications of NTMFS4925NT3G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9.7A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
10.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
1264pF @ 15V
Power - Max
920mW
Mounting Type
Surface Mount
Package / Case
8-TDFN
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
10 mOhms
Forward Transconductance Gfs (max / Min)
52 s
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
16.7 A
Power Dissipation
0.92 W, 2.7 W, 6.16 W, 23.2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
10.8 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTMFS4925NT3G
Manufacturer:
ON/安森美
Quantity:
20 000
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
120
100
110
90
80
70
60
50
40
30
20
10
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
0
0
−50
3
10 V
Figure 5. On−Resistance Variation with
−25
I
V
Figure 1. On−Region Characteristics
D
V
GS
4
= 30 A
DS
Figure 3. On−Resistance vs. V
T
1
= 10 V
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
4.5 V
0
5
Temperature
25
2
V
6
GS
T
50
(V)
J
= 25°C
7
3
75
TYPICAL CHARACTERISTICS
8
I
D
100
= 30 A
V
GS
4
GS
= 2.5 V
9
http://onsemi.com
125
4.0 V
3.5 V
3.0 V
5
10
150
4
10,000
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
1,000
0.011
120
100
100
110
90
80
70
60
50
40
30
20
10
10
0
5
1
10
Figure 4. On−Resistance vs. Drain Current and
Figure 6. Drain−to−Source Leakage Current
T = 25°C
20
V
DS
V
V
Figure 2. Transfer Characteristics
DS
30
= 10 V
GS
10
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
2
40
I
D
T
T
, DRAIN CURRENT (A)
T
J
J
J
50
= 125°C
= 150°C
= 85°C
Gate Voltage
15
vs. Voltage
V
V
T
GS
GS
60
J
= 25°C
= 4.5 V
= 10 V
3
70
T
J
= −55°C
20
80
V
90
GS
4
25
T
100
= 0 V
J
= 125°C
110
120
30
5