MRF8P20100HSR3 Freescale Semiconductor, MRF8P20100HSR3 Datasheet - Page 12

• Manufacturer Part Number: MRF8P20100HSR3
• Description: FET RF N-CH 2025MHZ 28V NI780H-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P20100HSR3

• Transistor Type: N-Channel
• Frequency: 2.03GHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current - Test: 400mA
• Voltage - Test: 28V
• Power - Output: 20W
• Package / Case: NI-780HS-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

12
MRF8P20100HR3 MRF8P20100HSR3
Figure 19. Series Equivalent Source and Load Impedance — Peaking Side — 1880 MHz
Figure 18. Series Equivalent Source and Load Impedance — Carrier Side — 1880 MHz
V
V
Input
Matching
Network
Input
Matching
Network
DD
DD
Note: Measured with Peaking side open.
Z
Z
Note: Measured with Carrier side open.
Z
Z
source
load
source
load
= 28 Vdc, I
= 28 Vdc, I
1880
1900
1920
1940
1960
1980
2000
2020
2040
MHz
1880
1900
1920
1940
1960
1980
2000
2020
2040
MHz
f
f
= Test circuit impedance as measured from
= Test circuit impedance as measured from
= Test circuit impedance as measured from
= Test circuit impedance as measured from
DQA
DQA
gate to ground.
drain to ground.
Z
gate to ground.
drain to ground.
Z
source
source
= 400 mA, V
= 400 mA, V
2.22 -- j7.34
2.27 -- j7.04
2.35 -- j6.75
2.41 -- j6.52
2.40 -- j6.33
2.42 -- j6.19
2.45 -- j6.17
2.34 -- j6.19
2.15 -- j5.91
2.67 -- j6.62
2.71 -- j6.34
2.69 -- j5.98
2.62 -- j5.84
2.58 -- j5.76
2.50 -- j5.75
2.29 -- j5.63
2.76 -- j6.11
2.11 -- j5.23
Z
Z
source
Device
Under
Test
Device
Under
Test
source
Ω
Ω
GSB
GSB
= 1.3 Vdc, P
= 1.3 Vdc, P
Z
Z
load
load
6.32 -- j6.84
6.13 -- j6.84
5.91 -- j6.87
5.61 -- j6.97
5.25 -- j7.09
4.95 -- j7.22
4.62 -- j7.41
4.09 -- j7.46
3.56 -- j7.08
0.50 -- j3.80
0.66 -- j3.23
0.88 -- j2.69
1.10 -- j2.22
1.36 -- j1.80
1.66 -- j1.45
2.03 -- j1.17
2.37 -- j0.98
2.64 -- j0.79
out
out
Z
Z
load
Ω
load
Ω
= 20 W Avg.
= 20 W Avg.
Output
Matching
Network
Output
Matching
Network
Freescale Semiconductor
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