MRF8P20100HSR3 Freescale Semiconductor, MRF8P20100HSR3 Datasheet - Page 16

• Manufacturer Part Number: MRF8P20100HSR3
• Description: FET RF N-CH 2025MHZ 28V NI780H-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P20100HSR3

• Transistor Type: N-Channel
• Frequency: 2.03GHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current - Test: 400mA
• Voltage - Test: 28V
• Power - Output: 20W
• Package / Case: NI-780HS-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

16
MRF8P20100HR3 MRF8P20100HSR3
Figure 29. Series Equivalent Source and Load Impedance — Lower Side — GSM EDGE
Figure 28. Series Equivalent Source and Load Impedance — Upper Side — GSM EDGE
Input
Matching
Network
Input
Matching
Network
Note: Measured with Lower side open.
Z
Z
Note: Measured with Upper side open.
Z
Z
source
load
source
load
V
V
1760
1780
1800
1820
1840
1860
1880
1900
1920
MHz
DD
DD
1760
1780
1800
1820
1840
1860
1880
1900
1920
MHz
f
f
= 28 Vdc, I
= 28 Vdc, I
= Test circuit impedance as measured from
= Test circuit impedance as measured from
= Test circuit impedance as measured from
= Test circuit impedance as measured from
gate to ground.
drain to ground.
Z
gate to ground.
drain to ground.
Z
source
source
DQA
DQA
3.12 -- j7.74
3.13 -- j7.35
3.21 -- j7.12
3.20 -- j7.05
3.08 -- j6.98
2.95 -- j6.82
2.88 -- j6.57
2.87 -- j6.21
2.89 -- j5.85
3.72 -- j7.89
3.77 -- j7.60
3.82 -- j7.48
3.72 -- j7.46
3.55 -- j7.37
3.39 -- j7.16
3.29 -- j6.85
3.24 -- j6.48
3.22 -- j6.17
Z
= I
Z
= I
source
Device
Under
Test
Device
Under
Test
source
Ω
DQB
DQB
Ω
= 330 Vdc, P
= 330 mA, P
Z
Z
load
load
out
out
4.39 -- j7.66
4.44 -- j7.38
4.50 -- j7.30
4.42 -- j7.31
4.26 -- j7.28
4.10 -- j7.15
4.00 -- j6.92
3.95 -- j6.62
3.94 -- j6.36
3.55 -- j5.43
3.62 -- j5.09
3.76 -- j4.85
3.87 -- j4.75
3.90 -- j4.66
3.92 -- j4.52
3.96 -- j4.31
4.03 -- j4.02
4.13 -- j3.71
= 42 W Avg.
= 42 W Avg.
Z
Z
load
Ω
load
Ω
Output
Matching
Network
Output
Matching
Network
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