MRF8S9170NR3 Freescale Semiconductor, MRF8S9170NR3 Datasheet
MRF8S9170NR3
Specifications of MRF8S9170NR3
Available stocks
Related parts for MRF8S9170NR3
MRF8S9170NR3 Summary of contents
Page 1
... MHz AVG SINGLE W- -CDMA LATERAL N- -CHANNEL RF POWER MOSFET CASE 2021- -03, STYLE 1 OM- -780- -2 Symbol Value Unit V --0.5, +70 Vdc DSS V --6.0, +10 Vdc GS V 32, +0 Vdc DD T --65 to +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R °C/W θJC 0.38 0.33 MRF8S9170NR3 1 ...
Page 2
... Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 920 MHz 940 MHz 960 MHz 1. Part internally matched both on input and output. MRF8S9170NR3 2 Rating 3 = 25°C unless otherwise noted) Symbol I ...
Page 3
... MHz Bandwidth DD DQ P1dB IMD sym VBW res = 50 W Avg. G out F ∆G ∆P1dB Min Typ Max Unit — 177 — W MHz — 17 — — 50 — MHz — 0.32 — dB — 0.01 — dB/°C — 0.01 — dBm/°C MRF8S9170NR3 3 ...
Page 4
... C1* C2 *C1 and C17 are mounted vertically. Figure 1. MRF8S9170NR3 Test Circuit Component Layout Table 6. MRF8S9170NR3 Test Circuit Component Designations and Values Part B1 Short Ferrite Bead C1, C8, C17, C18, C19 Chip Capacitors C20, C21 C2 2.0 pF Chip Capacitor C3, C4 3.3 pF Chip Capacitors C5 100 μ Electrolytic Capacitor C6 3.3. μ ...
Page 5
... Probability on CCDF PARC -- 79 100 120 P , OUTPUT POWER (WATTS) out Figure 4. Output Peak- -to- -Average Ratio Compression (PARC) versus Output Power --27 --1.5 --2 --29 0 --31 --5 --2.5 --33 --10 --3 --35 --15 --3.5 --37 --4 --20 960 980 100 --15 80 --20 70 ACPR 60 --25 η --35 --40 30 --45 20 140 160 MRF8S9170NR3 5 ...
Page 6
... Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK--TO--AVERAGE (dB) Figure 7. CCDF W- -CDMA IQ Magnitude Clipping, Single- -Carrier Test Signal MRF8S9170NR3 6 TYPICAL CHARACTERISTICS 920 MHz 940 MHz 960 MHz f = 920 MHz ps 940 MHz 940 MHz Vdc 1000 mA DD ...
Page 7
... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Device Input Matching Under Test Network Z Z source load Output Matching Network MRF8S9170NR3 7 ...
Page 8
... ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V MRF8S9170NR3 Vdc 909 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 920 MHz f = 920 MHz f = 960 MHz f = 940 MHz INPUT POWER (dBm) in P1dB f Watts dBm Watts ...
Page 9
... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S9170NR3 9 ...
Page 10
... MRF8S9170NR3 10 RF Device Data Freescale Semiconductor ...
Page 11
... RF Device Data Freescale Semiconductor MRF8S9170NR3 11 ...
Page 12
... D1 minimum dimension from 0.730″ (18.54 mm) to 0.720″ (18.29 mm), revised dimension E2 from 0.312″ (7.92 mm) to 0.306″ (7.77 mm), and revised wording of Note 8 on Sheet 3. • Changed Human Body Model ESD rating from Class 1C to Class 2 to reflect recent ESD test results of the device MRF8S9170NR3 12 REVISION HISTORY Description ...
Page 13
... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009--2010. All rights reserved. MRF8S9170NR3 13 ...