MRF8S9170NR3 Freescale Semiconductor, MRF8S9170NR3 Datasheet - Page 3

• Manufacturer Part Number: MRF8S9170NR3
• Description: FET RF N-CH 900MHZ 28V OM780-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S9170NR3

• Transistor Type: N-Channel
• Frequency: 920MHz
• Gain: 19.3dB
• Voltage - Rated: 70V
• Current - Test: 1A
• Voltage - Test: 28V
• Power - Output: 50W
• Package / Case: OM-780-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Typical Performance (In Freescale Test Fixture, 50 ohm system) V
P
IMD Symmetry @ 160 W PEP, P
VBW Resonance Point
Gain Flatness in 40 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
out
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
(--30°C to +85°C)
(--30°C to +85°C)
@ 1 dB Compression Point, CW

30 dBc
Characteristic
out
where IMD Third Order
(T
out
A
= 25°C unless otherwise noted) (continued)
= 50 W Avg.
DD
= 28 Vdc, I
Symbol
VBW
IMD
∆P1dB
P1dB
∆G
G
DQ
sym
F
res
= 1000 mA, 920--960 MHz Bandwidth
Min
—
—
—
—
—
—
0.32
0.01
0.01
Typ
177
17
50
Max
—
—
—
—
—
—
MRF8S9170NR3
dBm/°C
dB/°C
MHz
MHz
Unit
dB
W
3