MRF8S19140HR3 Freescale Semiconductor, MRF8S19140HR3 Datasheet

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MRF8S19140HR3

Manufacturer Part Number
MRF8S19140HR3
Description
FET RF N-CH 1960MHZ 28V NI780H
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF8S19140HR3

Transistor Type
N-Channel
Frequency
1.96GHz
Gain
19.1dB
Voltage - Rated
65V
Current - Test
1.1A
Voltage - Test
28V
Power - Output
34W
Package / Case
NI-780
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 191 Watts CW
• Typical P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for CDMA, W--CDMA and LTE base station applications with
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers.Go to http://www.freescale.com/rf.
1100 mA, P
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Output Power (3 dB Input Overdrive from Rated P
and Common Source S--Parameters
Operation
Case Temperature 75°C, 34 W CW, 28 Vdc, I
Case Temperature 80°C, 140 W CW, 28 Vdc, I
calculators by product.
Select Documentation/Application Notes -- AN1955.
Frequency
1930 MHz
1960 MHz
1990 MHz
out
out
@ 1 dB Compression Point ≃ 138 Watts CW
= 34 Watts Avg., IQ Magnitude Clipping, Channel
(dB)
18.8
19.1
19.3
G
ps
(1,2)
Characteristic
Rating
31.7
31.4
31.5
(%)
η
D
DQ
DQ
= 1100 mA, 1960 MHz
= 1100 mA, 1960 MHz
Output PAR
DD
(dB)
6.4
6.5
6.5
out
= 28 Volts, I
)
ACPR
(dBc)
--38.5
--38.8
--38.8
DQ
=
Symbol
Symbol
V
R
V
V
T
T
DSS
T
θJC
GS
DD
stg
Document Number: MRF8S19140H
C
J
MRF8S19140HR3 MRF8S19140HSR3
1930- -1990 MHz, 34 W AVG., 28 V
MRF8S19140HSR3
MRF8S19140HR3
LATERAL N- -CHANNEL
CDMA, W- -CDMA, LTE
RF POWER MOSFETs
CASE 465A- -06, STYLE 1
CASE 465- -06, STYLE 1
MRF8S19140HSR3
--65 to +150
MRF8S19140HR3
Value
--0.5, +65
--6.0, +10
32, +0
Value
0.48
0.45
150
225
NI- -780S
NI- -780
(2,3)
Rev. 0, 5/2010
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1

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MRF8S19140HR3 Summary of contents

Page 1

... CASE 465- -06, STYLE 1 NI- -780 MRF8S19140HR3 CASE 465A- -06, STYLE 1 NI- -780S MRF8S19140HSR3 Symbol Value Unit V --0.5, +65 Vdc DSS V --6.0, +10 Vdc GS V 32, +0 Vdc DD T --65 to +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R °C/W θJC 0.48 0.45 MRF8S19140HR3 MRF8S19140HSR3 1 ...

Page 2

... Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 1930 MHz 1960 MHz 1990 MHz 1. Part internally matched both on input and output. MRF8S19140HR3 MRF8S19140HSR3 2 = 25°C unless otherwise noted) Symbol I DSS I ...

Page 3

... VBW res = 34 W Avg. G out F ∆G ∆P1dB Min Typ Max = 1100 mA, 1930--1990 MHz Bandwidth — 138 — — 15 — — 68 — — 0.5 — — 0.017 — — 0.010 — MRF8S19140HR3 MRF8S19140HSR3 Unit W MHz MHz dB dB/°C dBm/°C 3 ...

Page 4

... R2 C14 C1 *Stacked Figure 1. MRF8S19140HR3(HSR3) Test Circuit Component Layout Table 5. MRF8S19140HR3(HSR3) Test Circuit Component Designations and Values Part C1, C2, C3, C4, C5 Chip Capacitors C7, C8, C9 0.8 pF Chip Capacitors C10, C11 10 μ Chip Capacitors C12 330 μ Electrolytic Capacitor C13 6.8 μ Chip Capacitor C14 47 μ ...

Page 5

... Input Signal PAR = 7 0.01% Probability on CCDF OUTPUT POWER (WATTS) out Figure 4. Output Peak- -to- -Average Ratio Compression (PARC) versus Output Power 36 34 η -- --35 --0.5 --7 --36 --1 --14 --37 --1.5 --21 --38 --2 --28 --39 --2.5 --35 2020 2040 100 -- --25 η --30 -- --40 33 --45 27 PARC --50 21 100 120 MRF8S19140HR3 MRF8S19140HSR3 5 ...

Page 6

... Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK--TO--AVERAGE (dB) Figure 7. CCDF W- -CDMA IQ Magnitude Clipping, Single- -Carrier Test Signal MRF8S19140HR3 MRF8S19140HSR3 6 TYPICAL CHARACTERISTICS Vdc 1100 mA, Single--Carrier W--CDMA DD DQ 3.84 MHz Channel Bandwidth, Input Signal PAR = 7 0.01% Probability on CCDF 1990 MHz 1960 MHz ...

Page 7

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Input Device Under Matching Network Test Z Z source load Output Matching Network MRF8S19140HR3 MRF8S19140HSR3 7 ...

Page 8

... ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V MRF8S19140HR3 MRF8S19140HSR3 Vdc 1100 mA, Pulsed CW μsec(on) 10% Duty Cycle 1990 MHz 1960 MHz 1960 MHz 1990 MHz 1930 MHz INPUT POWER (dBm) in P1dB P3dB ...

Page 9

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S19140HR3 MRF8S19140HSR3 9 ...

Page 10

... MRF8S19140HR3 MRF8S19140HSR3 10 RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRF8S19140HR3 MRF8S19140HSR3 11 ...

Page 12

... MRF8S19140HR3 MRF8S19140HSR3 12 RF Device Data Freescale Semiconductor ...

Page 13

... For Software Part Number search at http://www.freescale.com, and select the “Part Number” link the Software & Tools tab on the part’s Product Summary page to download the respective tool. The following table summarizes revisions to this document. Revision Date 0 May 2010 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor REVISION HISTORY Description MRF8S19140HR3 MRF8S19140HSR3 13 ...

Page 14

... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF8S19140HR3 MRF8S19140HSR3 Document Number: MRF8S19140H Rev. 0, 5/2010 14 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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