MRF8S19140HR3 Freescale Semiconductor, MRF8S19140HR3 Datasheet - Page 6

• Manufacturer Part Number: MRF8S19140HR3
• Description: FET RF N-CH 1960MHZ 28V NI780H
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S19140HR3

• Transistor Type: N-Channel
• Frequency: 1.96GHz
• Gain: 19.1dB
• Voltage - Rated: 65V
• Current - Test: 1.1A
• Voltage - Test: 28V
• Power - Output: 34W
• Package / Case: NI-780
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

6
MRF8S19140HR3 MRF8S19140HSR3
0.0001
0.001
0.01
100
0.1
10
1
0
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
1
Figure 7. CCDF W- -CDMA IQ Magnitude
Clipping, Single- -Carrier Test Signal
2
3
PEAK--TO--AVERAGE (dB)
Input Signal
4
22
20
18
16
14
12
10
24
20
16
12
Figure 5. Single- -Carrier W- -CDMA Power Gain, Drain
5
8
4
0
1460
1
V
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
DD
Efficiency and ACPR versus Output Power
6
Figure 6. Broadband Frequency Response
1585
= 28 Vdc, I
1930 MHz
7
TYPICAL CHARACTERISTICS
V
P
I
DQ
DD
in
1710
P
= 0 dBm
W- -CDMA TEST SIGNAL
= 1100 mA
out
= 28 Vdc
DQ
8
1960 MHz
, OUTPUT POWER (WATTS) AVG.
= 1100 mA, Single--Carrier W--CDMA
1835
f, FREQUENCY (MHz)
9
10
Gain
1990 MHz
10
1960
1930 MHz
IRL
2085
--100
1960 MHz
--10
--20
--30
--40
--50
--60
--70
--80
--90
10
0
1990 MHz
--9
2210
Figure 8. Single- -Carrier W- -CDMA Spectrum
--ACPR in 3.84 MHz
--7.2
100
Integrated BW
2335
--5.4
η
ACPR
G
D
ps
300
2460
--3.6
0
--5
--10
--15
--20
--25
--30
60
50
40
30
20
10
0
f, FREQUENCY (MHz)
--1.8
Channel BW
3.84 MHz
0
0
--10
--20
--30
--40
--50
--60
Freescale Semiconductor
1.8
+ACPR in 3.84 MHz
3.6
Integrated BW
RF Device Data
5.4
7.2
9