MRF8S19140HSR3 Freescale Semiconductor, MRF8S19140HSR3 Datasheet - Page 2

• Manufacturer Part Number: MRF8S19140HSR3
• Description: FET RF N-CH 1960MHZ 28V NI780HS
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S19140HSR3

• Transistor Type: N-Channel
• Frequency: 1.96GHz
• Gain: 19.1dB
• Voltage - Rated: 65V
• Current - Test: 1.1A
• Voltage - Test: 28V
• Power - Output: 34W
• Package / Case: NI-780S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

2
MRF8S19140HR3 MRF8S19140HSR3
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Functional Tests
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
= 65 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
(1)
DS
D
D
D
(In Freescale Test Fixture, 50 ohm system) V
GS
GS
= 200 μAdc)
= 1100 mAdc, Measured in Functional Test)
= 3 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Frequency
1930 MHz
1960 MHz
1990 MHz
Characteristic
Test Methodology
(T
A
= 25°C unless otherwise noted)
DD
= 28 Vdc, I
(dB)
18.8
19.1
19.3
G
ps
Symbol
V
V
V
ACPR
DD
I
I
I
DQ
PAR
DS(on)
GS(th)
GS(Q)
G
IRL
DSS
DSS
GSS
η
ps
D
= 28 Vdc, I
= 1100 mA, P
31.7
31.4
31.5
(%)
η
D
18.0
30.0
Min
DQ
1.0
1.9
0.1
5.9
—
—
—
—
—
out
= 1100 mA, P
Output PAR
= 34 W Avg., f = 1960 MHz,
(dB)
6.4
6.5
6.5
--38.8
0.24
19.1
31.4
Typ
--24
1.8
2.6
6.5
—
—
—
IV (Minimum)
A (Minimum)
2 (Minimum)
out
Class
Freescale Semiconductor
= 34 W Avg.,
ACPR
(dBc)
--38.5
--38.8
--38.8
--37.5
Max
21.0
2.5
3.4
0.3
10
—
—
--7
1
1
RF Device Data
(continued)
μAdc
μAdc
μAdc
(dB)
Unit
Vdc
Vdc
Vdc
dBc
IRL
--24
--24
--15
dB
dB
dB
%