MRF8S19140HSR3 Freescale Semiconductor, MRF8S19140HSR3 Datasheet - Page 5

• Manufacturer Part Number: MRF8S19140HSR3
• Description: FET RF N-CH 1960MHZ 28V NI780HS
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S19140HSR3

• Transistor Type: N-Channel
• Frequency: 1.96GHz
• Gain: 19.1dB
• Voltage - Rated: 65V
• Current - Test: 1.1A
• Voltage - Test: 28V
• Power - Output: 34W
• Package / Case: NI-780S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

RF Device Data
Freescale Semiconductor
20
19
18
17
16
15
14
Figure 2. Output Peak- -to- -Average Ratio Compression (PARC)
19.8
19.6
19.4
19.2
18.8
18.6
18.4
18.2
--10
--20
--30
--40
--50
--60
20
19
18
--1
--2
--3
--4
--5
1
0
1880
20
1
Broadband Performance @ P
Figure 3. Intermodulation Distortion Products
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
V
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
ACPR
V
W--CDMA, 3.84 MHz Channel Bandwidth
Compression (PARC) versus Output Power
DD
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
DD
Figure 4. Output Peak- -to- -Average Ratio
1900
= 28 Vdc, P
= 28 Vdc, I
--1 dB = 33 W
TYPICAL CHARACTERISTICS
ACPR
40
V
I
DQ
1920
DD
versus Two- -Tone Spacing
= 1100 mA
= 28 Vdc, P
P
out
DQ
TWO--TONE SPACING (MHz)
out
IRL
= 55 W (PEP), I
= 1100 mA, f = 1960 MHz, Single--Carrier
, OUTPUT POWER (WATTS)
1940
f, FREQUENCY (MHz)
IM3--U
60
IM3--L
out
IM7--L
IM7--U
1960
--2 dB = 45 W
= 34 W (Avg.)
10
IM5--U
PARC
DQ
--3 dB = 61 W
IM5--L
= 1100 mA
80
1980
out
= 34 Watts Avg.
2000
100
G
η
ps
D
η
2020
D
PARC
G
ps
2040
MRF8S19140HR3 MRF8S19140HSR3
120
100
36
34
32
30
28
--34
--35
--36
--37
--38
--39
57
51
45
39
33
27
21
--20
--25
--30
--35
--40
--45
--50
0
--7
--14
--21
--28
--35
--0.5
--1
--1.5
--2
--2.5
0
5