MRF8S21140HR3 Freescale Semiconductor, MRF8S21140HR3 Datasheet

no-image

MRF8S21140HR3

Manufacturer Part Number
MRF8S21140HR3
Description
FET RF N-CH 2GHZ 28V NI780
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF8S21140HR3

Transistor Type
N-Channel
Frequency
2.14GHz
Gain
17.9dB
Voltage - Rated
65V
Current - Test
970mA
Voltage - Test
28V
Power - Output
34W
Package / Case
NI-780
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF8S21140HR3
Manufacturer:
FREESCALE
Quantity:
1 400
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Single-Carrier W-CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 188 Watts CW
• Typical P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Thermal Resistance, Junction to Case
Designed for W-CDMA and LTE base station applications with frequencies
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
970 mA, P
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Output Power (3 dB Input Overdrive from Rated P
and Common Source S-Parameters
Operation
Derate above 25°C
Case Temperature 75°C, 34 W CW, 28 Vdc, I
Case Temperature 80°C, 150 W CW
calculators by product.
Select Documentation/Application Notes - AN1955.
Frequency
2110 MHz
2140 MHz
2170 MHz
out
out
@ 1 dB Compression Point ] 126 Watts CW
= 34 Watts Avg., IQ Magnitude Clipping, Channel
C
= 25°C
(dB)
17.7
17.9
18.1
G
ps
(2,3)
Characteristic
(1)
Rating
, 28 Vdc, I
32.1
31.7
31.7
(%)
h
D
DQ
= 970 mA, 2140 MHz
DQ
Output PAR
= 970 mA, 2140 MHz
(dB)
DD
6.2
6.4
6.4
out
= 28 Volts, I
)
ACPR
(dBc)
-37.0
-37.5
-37.5
DQ
=
(1)
Symbol
Symbol
V
R
V
V
CW
T
T
DSS
T
θJC
GS
DD
stg
C
J
Document Number: MRF8S21140H
MRF8S21140HR3 MRF8S21140HSR3
2110-2170 MHz, 34 W AVG., 28 V
MRF8S21140HSR3
MRF8S21140HR3
LATERAL N-CHANNEL
CASE 465A-06, STYLE 1
RF POWER MOSFETs
CASE 465-06, STYLE 1
MRF8S21140HSR3
MRF8S21140HR3
W-CDMA, LTE
-65 to +150
Value
-0.5, +65
-6.0, +10
32, +0
Value
0.86
0.47
0.42
NI-780S
150
225
168
NI-780
(3,4)
Rev. 0, 5/2010
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
1

Related parts for MRF8S21140HR3

MRF8S21140HR3 Summary of contents

Page 1

... CASE 465-06, STYLE 1 NI-780 MRF8S21140HR3 CASE 465A-06, STYLE 1 NI-780S MRF8S21140HSR3 Symbol Value Unit V -0.5, +65 Vdc DSS V -6.0, +10 Vdc GS V 32, +0 Vdc DD °C T -65 to +150 stg °C T 150 C °C T 225 J CW 168 W 0.86 W/°C (3,4) Symbol Value Unit °C/W R θJC 0.47 0.42 MRF8S21140HR3 MRF8S21140HSR3 1 ...

Page 2

... Frequency 2110 MHz 2140 MHz 2170 MHz Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part internally matched both on input and output. MRF8S21140HR3 MRF8S21140HSR3 2 = 25°C unless otherwise noted) Symbol I DSS I DSS I GSS V ...

Page 3

... IMD sym VBW res = 34 W Avg. G out F ΔG ΔP1dB Min Typ Max = 970 mA, 2110-2170 MHz Bandwidth — 126 — — 10 — — 53 — — 0.5 — — 0.016 — (1) — — 0.018 MRF8S21140HR3 MRF8S21140HSR3 Unit W MHz MHz dB dB/°C dBm/°C 3 ...

Page 4

... C6 C5 MRF8S21140 Rev. 0 *C7, C8, C9, C10, C11, C12, C13, C14, and C15 are mounted vertically. Figure 1. MRF8S21140HR3(HSR3) Test Circuit Component Layout Table 5. MRF8S21140HR3(HSR3) Test Circuit Component Designations and Values Part 10 μF Chip Capacitor C1 0.01 μF Chip Capacitor C2 4.7 μF Chip Capacitor ...

Page 5

... Probability on CCDF OUTPUT POWER (WATTS) out Figure 4. Output Peak-to-Average Ratio Compression (PARC) versus Output Power 40 36 η - PARC -6 -24 -1 -28 -12 -2 -32 -18 -3 -36 -24 -4 -40 -5 -30 2200 2220 100 -20 57 ACPR 51 -25 η - -40 27 -45 PARC -50 21 100 120 MRF8S21140HR3 MRF8S21140HSR3 5 ...

Page 6

... Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK-T O-A VERAGE (dB) Figure 7. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal MRF8S21140HR3 MRF8S21140HSR3 6 TYPICAL CHARACTERISTICS = 28 Vdc 970 mA, Single-Carrier W-CDMA DD DQ 2170 MHz 2140 MHz 2110 MHz 2170 MHz 2140 MHz 2110 MHz Input Signal PAR = 7 0.01% Probability on CCDF ...

Page 7

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Input Device Under Matching Network Test Z Z source load Output Matching Network MRF8S21140HR3 MRF8S21140HSR3 7 ...

Page 8

... ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V MRF8S21140HR3 MRF8S21140HSR3 Vdc 970 mA, Pulsed CW μsec(on), 10% Duty Cycle Ideal 2170 MHz Actual 2110 MHz 2140 MHz 2140 MHz 2170 MHz 2110 MHz 26 28 ...

Page 9

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S21140HR3 MRF8S21140HSR3 9 ...

Page 10

... MRF8S21140HR3 MRF8S21140HSR3 10 RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRF8S21140HR3 MRF8S21140HSR3 11 ...

Page 12

... MRF8S21140HR3 MRF8S21140HSR3 12 RF Device Data Freescale Semiconductor ...

Page 13

... For Software Part Number search at http://www.freescale.com, and select the “Part Number” link the Software & Tools tab on the part's Product Summary page to download the respective tool. The following table summarizes revisions to this document. Revision Date • Initial Release of Data Sheet 0 May 2010 RF Device Data Freescale Semiconductor REVISION HISTORY Description MRF8S21140HR3 MRF8S21140HSR3 13 ...

Page 14

... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1-800-441-2447 or +1-303-675-2140 Fax: +1-303-675-2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF8S21140HR3 MRF8S21140HSR3 Document Number: MRF8S21140H Rev. 0, 5/2010 14 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

Related keywords