MRF8S21140HR3 Freescale Semiconductor, MRF8S21140HR3 Datasheet - Page 3

• Manufacturer Part Number: MRF8S21140HR3
• Description: FET RF N-CH 2GHZ 28V NI780
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S21140HR3

• Transistor Type: N-Channel
• Frequency: 2.14GHz
• Gain: 17.9dB
• Voltage - Rated: 65V
• Current - Test: 970mA
• Voltage - Test: 28V
• Power - Output: 34W
• Package / Case: NI-780
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
P
IMD Symmetry @ 55 W PEP, P
VBW Resonance Point
Gain Flatness in 60 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
out
Intermodulation
between Upper and Lower Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
(-30 °C to +85°C)
(-30 °C to +85°C)
@ 1 dB Compression Point, CW
`
30 dBc (Delta IMD Third Order Intermodulation
Characteristic
out
where IMD Third Order
(T
out
A
= 25°C unless otherwise noted) (continued)
= 34 W Avg.
DD
= 28 Vdc, I
Symbol
VBW
IMD
ΔP1dB
P1dB
ΔG
G
sym
F
DQ
res
= 970 mA, 2110-2170 MHz Bandwidth
Min
—
—
—
—
—
—
MRF8S21140HR3 MRF8S21140HSR3
0.018
0.016
Typ
126
0.5
10
53
(1)
Max
—
—
—
—
—
—
dBm/°C
dB/°C
MHz
MHz
Unit
dB
W
3