MRF8S26120HSR3 Freescale Semiconductor, MRF8S26120HSR3 Datasheet - Page 3

• Manufacturer Part Number: MRF8S26120HSR3
• Description: FET RF N-CH 2.6GHZ 28V NI780S
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S26120HSR3

• Transistor Type: N-Channel
• Frequency: 2.7GHz
• Gain: 15.6dB
• Voltage - Rated: 65V
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 28W
• Package / Case: NI-780S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
P
IMD Symmetry @ 80 W PEP, P
VBW Resonance Point
Gain Flatness in 70 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
out
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
(--30°C to +85°C)
(--30°C to +85°C)
@ 1 dB Compression Point, CW

(1)
30 dBc
Characteristic
out
where IMD Third Order
(T
out
A
= 25°C unless otherwise noted) (continued)
= 28 W Avg.
DD
= 28 Vdc, I
Symbol
VBW
IMD
∆P1dB
P1dB
∆G
G
DQ
sym
F
res
= 900 mA, 2620--2690 MHz Bandwidth
Min
—
—
—
—
—
—
MRF8S26120HR3 MRF8S26120HSR3
0.015
0.007
Typ
110
0.1
18
65
Max
—
—
—
—
—
—
dB/°C
dB/°C
MHz
MHz
Unit
dB
W
3