PK20X128VLQ100 Freescale Semiconductor, PK20X128VLQ100 Datasheet - Page 34
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PK20X128VLQ100
Manufacturer Part Number
PK20X128VLQ100
Description
IC ARM CORTEX MCU 128K 144-LQFP
Manufacturer
Freescale Semiconductor
Series
Kinetisr
Datasheet
1.PK20X128VLQ100.pdf
(74 pages)
Specifications of PK20X128VLQ100
Core Processor
ARM Cortex-M4
Core Size
32-Bit
Speed
100MHz
Connectivity
CAN, EBI/EMI, I²C, IrDA, SDHC, SPI, UART/USART, USB, USB OTG
Peripherals
DMA, I²S, LVD, POR, PWM, WDT
Number Of I /o
100
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
1.71 V ~ 3.6 V
Data Converters
A/D 33x16b, D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PK20X128VLQ100
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Peripheral operating requirements and behaviors
1. Typical data retention values are based on intrinsic capability of the technology measured at high temperature derated to
2. Data retention is based on T
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ T
4. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the
FTFL to obtain an effective endurance increase for the EEPROM data. The built-in
EEPROM record management system raises the number of program/erase cycles that can
be attained prior to device wear-out by cycling the EEPROM data through a larger
EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_subsystem =
34
n
n
n
t
n
n
t
t
nvmretee100
t
t
nvmwree128
nvmwree512
nvmretd100
nvmretee10
nvmwree32k
n
Symbol
nvmwree16
nvmretd1k
nvmretee1
nvmwree4k
nvmcycd
25°C. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin
EB618.
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum value
assumes all byte-writes to FlexRAM.
Data retention after up to 1 K cycles
Data retention after up to 100 cycles
Cycling endurance
Data retention up to 100% of write endurance
Data retention up to 10% of write endurance
Data retention up to 1% of write endurance
Write endurance
Description
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio =
32,768
Table 21. NVM reliability specifications (continued)
EEPROM – 2 × EEESPLIT × EEESIZE
K20 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
javg
= 55°C (temperature profile over the lifetime of the application).
EEESPLIT × EEESIZE
FlexRAM as EEPROM
Preliminary
1.27 M
315 K
10 M
80 M
10 K
35 K
Min.
10
15
10
15
5
Typ.
j
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
≤ 125°C.
× Write_efficiency × n
1
Max.
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Freescale Semiconductor, Inc.
cycles
writes
writes
writes
writes
writes
years
years
years
years
years
Unit
nvmcycd
Notes
2
2
3
2
2
2
4