MCP2004T-E/MD Microchip Technology, MCP2004T-E/MD Datasheet - Page 14
![IC TXRX LIN B/DIR 8DFN](/photos/16/0/160077/dfn8_sml.jpg)
MCP2004T-E/MD
Manufacturer Part Number
MCP2004T-E/MD
Description
IC TXRX LIN B/DIR 8DFN
Manufacturer
Microchip Technology
Datasheet
1.MCP2003-EMD.pdf
(32 pages)
Specifications of MCP2004T-E/MD
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Operating Supply Voltage
6 V to 27 V
Package / Case
DFN-8
Supply Current
90 uA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
MCP2003/4
2.4
DS22230C-page 14
AC CHARACTERISTICS
Bus Interface – Constant Slope Time Parameters
Slope Rising and Falling
Edges
Propagation Delay of
Transmitter
Propagation Delay of
Receiver
Symmetry of Propagation
Delay of Receiver Rising
Edge w.r.t. Falling Edge
Symmetry of Propagation
Delay of Transmitter Rising
Edge w.r.t. Falling Edge
Time to Sample of FAULT/
TXE for Bus Conflict Report-
ing
Duty Cycle 1 @20.0 kbit/sec
Duty Cycle 2 @20.0 kbit/sec
Duty Cycle 3 @10.4 kbit/sec
Duty Cycle 4 @10.4 kbit/sec
Wake-up Timing
Bus Activity Debounce time
Bus Activity to Vren on
WAKE to Vren on
Chip Select to Vren on
Chip Select to Vren off
AC Specifications
Parameter
V
tBACTVE
ttranspd
trecsym
tWAKE
tCSOR
BB
tCSPD
ttrans-
trecpd
tslope
tBDB
tfault
Sym
sym
= 6.0V to 27.0V; T
Min.
.396
.417
-2.0
-2.0
3.5
35
—
—
—
—
—
—
—
5
Typ.
—
—
—
—
—
—
—
—
—
—
A
= -40°C to +125°C
Max.
22.5
32.5
.581
.590
150
150
150
4.0
6.0
2.0
2.0
20
80
—
—
Units
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
7.3V <= V
ttranspd = max (ttranspdr or ttranspdf)
trecpd = max (trecpdr or trecpdf)
trecsym = max (trecpdf – trecpdr)
R
ttranssym = max (ttranspdf - ttranspdr)
tfault = max (ttranspd + tslope + trecpd)
Cbus; Rbus conditions:
1 nF; 1 k | 6.8 nF; 660 | 10 nF; 500
THrec(max) = 0.744 x V
THdom(max) = 0.581 x V
V
D1 = tbus_rec(min)/2 x tbit)
Cbus; Rbus conditions:
1 nF; 1 k | 6.8 nF; 660 | 10 nF; 500
THrec(max) = 0.284 x V
THdom(max) = 0.422 x V
V
D2 = tbus_rec(max)/2 x tbit)
Cbus; Rbus conditions:
1 nF; 1 k | 6.8 nF; 660 | 10 nF; 500
THrec(max) = 0.778 x V
THdom(max) = 0.616 x V
V
D3 = tbus_rec(min)/2 x tbit)
Cbus; Rbus conditions:
1 nF; 1 k | 6.8 nF; 660 | 10 nF; 500
THrec(max) = 0.251 x V
THdom(max) = 0.389 x V
V
D4 = tbus_rec(max)/2 x tbit)
Bus debounce time, 10 µs typical
After Bus debounce time, 52 µs typical
Vren floating
Vren floating
RXD
BB
BB
BB
BB
=7.0V – 18V; tbit = 50 µs
=7.6V – 18V; tbit = 50 µs
=7.0V – 18V; tbit = 96 µs
=7.6V – 18V; tbit = 96 µs
2.4
BB
TO
<= 18V
Test Conditions
2010 Microchip Technology Inc.
V
CC
, C
RXD
BB
BB
BB
BB
BB
BB
BB
BB
20
,
,
,
,
,
,
,
,
P
F