NCN8024DWR2G ON Semiconductor, NCN8024DWR2G Datasheet - Page 7

• Manufacturer Part Number: NCN8024DWR2G
• Description: IC SMART CARD IC2 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NCN8024DWR2G

• Applications: Smart Card Reader, Writer
• Voltage - Supply: 5V
• Package / Case: 28-SOIC (0.300", 7.50mm Width)
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Interface: -

POWER SUPPLY SECTION
DC/DC CONVERTER
NOTE:
4. Guaranteed by design and characterization
5. These values take into account the tolerance of the cms capacitor used. The allowed values are single or distributed capacitor combination
DIGITAL INPUT/OUTPUT SECTION CLKIN, RSTIN, I/Ouc, AUX1uc, AUX2uc, CLKDIV1, CLKDIV2, CMDVCC, 5V/3V
(V
NOTE:
6. Guaranteed by design and characterization
1, 2, 3, 19,
20, 24, 26,
1, 2, 3, 19,
20, 24, 26,
1, 2, 3, 19,
1, 2, 3, 19,
Pin
26, 27, 28
26, 27, 28
17
17
17
17
17
17
DD
not exceeding 1.0 mF with 220 nF + 330 nF typical and recommended. It is recommended to use X5R or X7R−type capacitors with very
low ESR (< 100 mW) for optimal performances.
27, 28
27, 28
20, 24
20, 24
Pin
= 3.3 V; V
24
I
Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed
circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the
declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device
specification limit values are applied individually under normal operating conditions and not valid simultaneously.
Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed
circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the
declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device
specification limit values are applied individually under normal operating conditions and not valid simultaneously.
CRD_V
DV
CRD_VCC_SC
CRD_V
CRD_V
I
CRD_VCC
Symbol
CRD_VCC
DDP
Symbol
F
CCSR
CLKIN
V
V
CC
CC
I
I
I
I
IH
IH
IL
IL
IH
= 5 V; T
IL
Output Card Supply Voltage @ 3.6 V v V
65 mA load transient from 100 Hz to 200 MHz (including ripple)
(Note 4)
Output Card Supply Voltage @ 4.5 V< V
Load Pulses of 40 nAs/t < 400 ns and |I
(Including Ripple) (Note 4)
Card Supply Current
Short−Circuit Current − CRD_V
Output Card Supply Voltage Ripple Peak−to−Peak − f
200 MHz (Load Transient with 65 mA Peak Current) (Note 4)
Slew Rate on CRD_V
Clock Frequency on Pin CLKIN (with Divider Ratio w 2) (Note 6)
Input Voltage Level Low: CLKIN, RSTIN, I/Ouc, AUX1uc, AUX2uc,
CLKDIV1, CLKDIV2, CMDVCC, 5V/3V
Input Voltage Level High: CLKIN, RSTIN, I/O, AUX1, AUX2,
CLKDIV1, CLKDIV2, CMDVCC, 5V/3V
CLKDIV1, CLKDIV2, CMDVCC, RSTIN, CLKIN, 5V/3V Low Level
Input Leakage Current, V
CLKDIV1, CLKDIV2, CMDVCC, RSTIN, CLKIN, 5V/3V Low Level
Input Leakage Current, V
I/Ouc, AUX1uc, AUX2uc Low Level Input Leakage Current, V
I/Ouc, AUX1uc, AUX2uc High Level Input Leakage Current, V
amb
= 25°C; F
(V
DD
CRD_V
CRD_V
CRD_V
CRD_V
@ CRD_V
@ CRD_V
= 3.3 V; V
CLKIN
CC
CC
CC
CC
CC
CC
= 3.0 V
= 5.0 V
= 3.0 V
= 5.0 V
CC
= 10 MHz)
DDP
= 3.0 V
= 5.0 V
Up or Down (Note 4)
IL
IH
= 5 V; T
= 0 V
= V
CC
Rating
Rating
DD
http://onsemi.com
Shorted to Ground
amb
= 25°C; F
CC
DDP
DDP
| < 200 mA Peak Current
7
< 5.5 V with Current−
v 5.5 V with |I
CLKIN
ripple
= 10 MHz)
= 100 Hz to
CC
IH
IL
= V
| v
= 0 V
DD
0.7 x V
2.76
4.65
2.76
4.65
Min
−0.3
Min
−
−
−
−
−
DD
3.00
5.00
3.00
5.00
110
Typ
Typ
−
−
−
−
−
−
−
0.3 x V
V
DD
Max
3.20
5.25
3.20
5.25
0.22
150
350
Max
75
75
600
1.0
1.0
27
10
+ 0.3
DD
V/ms
Unit
mA
mA
mV
Unit
MHz
V
V
V
V
mA
mA
mA
mA
V
V