LPT 80A OSRAM Opto Semiconductors Inc, LPT 80A Datasheet

Photodetector Transistors PHOTOTRANSISTOR

LPT 80A

Manufacturer Part Number

LPT 80A

Description

Photodetector Transistors PHOTOTRANSISTOR

Manufacturer

OSRAM Opto Semiconductors Inc

Type

IR Chipr

Datasheet

1.LPT_80A.pdf (6 pages)

Specifications of LPT 80A

Maximum Power Dissipation

100 mW

Maximum Dark Current

1 nA

Collector- Emitter Voltage Vceo Max

30 V

Collector-emitter Saturation Voltage

150 mV

Maximum Operating Temperature

+ 100 C

Minimum Operating Temperature

- 40 C

Package / Case

Side Looker

Voltage - Collector Emitter Breakdown (max)

30V

Current - Collector (ic) (max)

50mA

Current - Dark (id) (max)

50nA

Wavelength

850nm

Viewing Angle

70°

Power - Max

100mW

Mounting Type

Through Hole

Orientation

Side View

Phototransistor Type

Phototransistor

Polarity

NPN

Number Of Elements

Emitter-collector Voltage (max)

Collector-emitter Voltage

30V

Collector Current (dc) (max)

50mA

Collector-emitter Sat Volt (max)

0.15V

Dark Current (max)

3nA

Light Current

3.2mA

Rise Time

10000ns

Fall Time

10000ns

Power Dissipation

100mW

Peak Wavelength

850nm

Half-intensity Angle

70deg

Operating Temp Range

-40C to 100C

Operating Temperature Classification

Industrial

Mounting

Through Hole

Pin Count

Package Type

Side Looker

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

Q68000A7852

Current page: 1 of 6
Download datasheet (226Kb)

NPN-Silizium-Fototransistor

Silicon NPN Phototransistor

Lead (Pb) Free Product - RoHS Compliant

LPT 80 A

Wesentliche Merkmale

• Spektraler Bereich der Fotoempfindlichkeit:

• Gehäuse: Sidelooker, Harz

• Besonderheit des Bauteils:

• Gehäusegleich: IRED IRL 80 A, IRL 81 A

Anwendungen

• Fertigungs- und Kontrollanwendungen der

• Lichtschranken

Typ

Type

LPT 80 A

2008-08-14

450 nm ...1100 nm

hohe Fotoempfindlichkeit

Industrie

Bestellnummer

Ordering Code

Q68000A7852

Fotostrom,

Photocurrent

Ipce (mA)

≥ 0.25

= 0.5mW/cm

Features

• Spectral Range of Sensitivity:

• Package: Sidelooker, Epoxy

• Feature of the device:

• Package Match: IR emitter IRL 80 A, IRL 81 A

Applications

• A variety of manufacturing and monitoring

• Photointerrupters

450 nm ...1100 nm

high photosensitivity

applications

, λ = 950nm

= 5 V

Related parts for LPT 80A

LPT 80A Summary of contents

Page 1

NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead (Pb) Free Product - RoHS Compliant LPT 80 A Wesentliche Merkmale • Spektraler Bereich der Fotoempfindlichkeit: 450 nm ...1100 nm • Gehäuse: Sidelooker, Harz • Besonderheit des Bauteils: hohe Fotoempfindlichkeit • Gehäusegleich: IRED IRL 80 ...

Page 2

Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ µs Collector surge current Emitter-Kollektorspannung Emitter-collector voltage = 25 ° Verlustleistung, A Total power dissipation ...

Page 3

C, λ = 950 nm) T Kennwerte ( A Characteristics Bezeichnung Parameter Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit 10% von max Spectral range of sensitivity ...

Page 4

Relative Spectral Sensitivity (λ) rel 100 % 90 S rel 400 500 600 700 800 900 1000 1100 lambda Photocurrent PCE25 ...

Page 5

Maßzeichnung Package Outlines 1.52 (0.060) Collector Approx. weight 0.2 g Maß (inch) / Dimensions in mm (inch). Empfohlenes LötpaddesignWellenlöten (TTW) Recommended Solder Pad TTW Soldering Maß (inch) / Dimensions in mm (inch). 2008-08-14 16.51 (0.650) 5.84 ...

Page 6

Lötbedingungen Soldering Condition Wellenlöten (TTW) TTW Soldering 300 C 250 T 235 C ... 260 C 200 1. Welle 1. wave 150 ca 200 K/s 100 C ... 130 C 100 Published by OSRAM Opto Semiconductors ...

Related keywords

LPT 80A datasheet
LPT 80A data sheet
LPT 80A pdf datasheet
LPT 80A component
LPT 80A part
LPT 80A distributor
LPT 80A RoHS
LPT 80A datasheet download