LPT 80A OSRAM Opto Semiconductors Inc, LPT 80A Datasheet - Page 2

• Manufacturer Part Number: LPT 80A
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: IR Chipr

Specifications of LPT 80A

• Maximum Power Dissipation: 100 mW
• Maximum Dark Current: 1 nA
• Collector- Emitter Voltage Vceo Max: 30 V
• Collector-emitter Saturation Voltage: 150 mV
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: Side Looker
• Voltage - Collector Emitter Breakdown (max): 30V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 50nA
• Wavelength: 850nm
• Viewing Angle: 70°
• Power - Max: 100mW
• Mounting Type: Through Hole
• Orientation: Side View
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Emitter-collector Voltage (max): 7V
• Collector-emitter Voltage: 30V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.15V
• Dark Current (max): 3nA
• Light Current: 3.2mA
• Rise Time: 10000ns
• Fall Time: 10000ns
• Power Dissipation: 100mW
• Peak Wavelength: 850nm
• Half-intensity Angle: 70deg
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: Side Looker
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q68000A7852

Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Kollektor-Emitterspannung
Collector-emitter voltage
Kollektorstrom
Collector current
Kollektorspitzenstrom, τ = 10 µs
Collector surge current
Emitter-Kollektorspannung
Emitter-collector voltage
Verlustleistung,
Total power dissipation
Wärmewiderstand
Thermal resistance
2008-08-14
T
A
= 25 ° C
Symbol
Symbol
T
V
I
I
V
P
R
C
CS
2
op
CE
EC
tot
thJA
;
T
stg
Wert
Value
– 40 …+ 100
30
50
100
7
100
750
Einheit
Unit
° C
V
mA
mA
V
mW
K/W
LPT 80 A