BPX 38-2/3 OSRAM Opto Semiconductors Inc, BPX 38-2/3 Datasheet - Page 23

• Manufacturer Part Number: BPX 38-2/3
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 38-2/3

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 20 nA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: TO-18
• Voltage - Collector Emitter Breakdown (max): 50V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 100nA
• Wavelength: 880nm
• Viewing Angle: 80°
• Power - Max: 220mW
• Mounting Type: Through Hole
• Orientation: Top View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P3578

For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Silicon Photodetectors
For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
Mini Array
Mini Array
Array
Photodetectors for special applications
Phototransistor Arrays in plastic package
Package
Infrared Components
Silicon Photodetectors
Type
SFH 305
SFH 305-2/3
BPX 81
BPX 81-2/3
BPX 81-3
BPX 81-3/4
BPX 81-4
BPX 80
BPX 82
BPX 83
BPX 84
BPX 85
BPX 86
BPX 87
BPX 88
BPX 89
http://catalog.osram-os.com
Half
angle
ϕ
[°]
± 16
± 18
± 18
Radiant
sensitive
area typ.
[mm
0.11
0.11
0.11
2
]
I
[mA]
0.25 ... 1.25
0.25 ... 0.8
≥ 0.25
0.25 ... 0.8
0.4 ... 0.8
≥ 0.4
≥ 0.63
≥ 0.32
PCE
Measurement cond.
λ = 950 nm, E
0.5 mW/cm
5 V
λ = 950 nm, E
0.5 mW/cm
5 V
λ = 950 nm, E
0.5 mW/cm
5 V
2
2
2
, V
, V
, V
e
e
e
CE
CE
CE
=
=
=
=
=
=
V
max.
[V]
35
35
35
CE
λ
typ.
[nm]
450 ... 1100
450 ... 1100
450 ... 1100
10%
t
typ
[μs]
6
7
6
r
, t
f
Ordering Code
Q62702P0836
Q62702P3589
Q62702P0020
Q62702P3583
Q62702P0043S0
03
Q62702P3584
Q62702P0043S0
04
Q62702P0028
Q62702P0021
Q62702P0025
Q62702P0030
Q62702P0031
Q62702P0022
Q62702P0032
Q62702P0033
Q62702P0026
Technical Data
Package
Fig.
23
24
25
129