BPX 38-2/3 OSRAM Opto Semiconductors Inc, BPX 38-2/3 Datasheet - Page 52

• Manufacturer Part Number: BPX 38-2/3
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 38-2/3

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 20 nA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: TO-18
• Voltage - Collector Emitter Breakdown (max): 50V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 100nA
• Wavelength: 880nm
• Viewing Angle: 80°
• Power - Max: 220mW
• Mounting Type: Through Hole
• Orientation: Top View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P3578

Dimensions in mm (inch)
158
Infrared Components
Figure 31:
Figure 33:
Figure 35:
Center of
active area
1.65 (0.065)
1.35 (0.053)
ø0.9 (0.035)
ø0.7 (0.028)
SFH 2400, SFH 2400 FA
SFH 2701
BP 104 FASR, BPW 34 FSR, BPW 34 FASR
1
2
Cathode mark
0.7 (0.028)
0.4 (0.016)
For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
1.25 (0.049)
0.92 (0.036)
GPLY7034
Figure 32:
Figure 34:
Figure 36:
8.0 (0.315)
7.4 (0.291)
Cathode/
Collector
Cathode
5.2 (0.205)
5.0 (0.197)
15.5 (0.610)
14.7 (0.579)
A = 2 (0.079) x 2 (0.079)
Photosensitive area
Chip position
SFH 2505, SFH 2505 FA
BP 104 FS, BP 104 FAS, BPW 34 FS, BPW 34 FAS
KOM 2125
A
8.5 (0.335)
8.2 (0.323)
B = 5 (0.197) x 2 (0.079)
2
4.5 (0.177)
3.9 (0.154)
1
B
4.5 (0.177)
3.9 (0.154)
7.7 (0.303)
7.1 (0.280)
3
R
0.9 (0.035)
0.7 (0.028)
2.05 (0.081)
1.95 (0.077)
Outline Drawings
((3.2) (0.126))
0...0.1 (0...0.004)
0.3 (0.012)
1.2 (0.047)
1.1 (0.043)
Active area
Chip position
((3.2) (0.126))
GEOY6860
6.0 (0.236)
5.4 (0.213)
((R2.8 (0.110))
GEOY6969