BPV11 Vishay, BPV11 Datasheet - Page 3

Photodetector Transistors NPN Phototransistor 80V 150mW 450-1080nm

BPV11

Manufacturer Part Number
BPV11
Description
Photodetector Transistors NPN Phototransistor 80V 150mW 450-1080nm
Manufacturer
Vishay
Type
Chipr
Datasheets

Specifications of BPV11

Maximum Power Dissipation
150 mW
Maximum Dark Current
50 nA
Maximum Operating Temperature
+ 100 C
Package / Case
T-1 3/4
Transistor Polarity
NPN
Wavelength Typ
850nm
Power Consumption
150mW
Viewing Angle
15°
No. Of Pins
2
Light Current
10mA
Dark Current
50nA
C-e Breakdown Voltage
70V
Current Rating
50mA
Transistor Case Style
T-1 3/4
Current Ic Typ
10mA
Fall Time Tf
3.8µs
Half Angle
15°
Rohs Compliant
Yes
Voltage - Collector Emitter Breakdown (max)
70V
Current - Collector (ic) (max)
10mA
Current - Dark (id) (max)
50nA
Wavelength
850nm
Power - Max
150mW
Mounting Type
Through Hole
Orientation
Top View
Svhc
No SVHC (20-Jun-2011)
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Lens Type
Water Clear
Collector-emitter Voltage
70V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.3V
Dark Current (max)
50nA
Power Dissipation
150mW
Peak Wavelength
850nm
Half-intensity Angle
30deg
Mounting
Through Hole
Pin Count
2
Package Type
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BPV11
Manufacturer:
ANPEC
Quantity:
850
Part Number:
BPV11F
Manufacturer:
NEC
Quantity:
15
Company:
Part Number:
BPV11F
Quantity:
3 000
BPV11
Vishay Semiconductors
www.vishay.com
344
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
94 8272
94 8244
94 8250
0.01
800
600
400
200
100
Fig. 4 - Collector Light Current vs. Irradiance
100
0.1
0.1
10
10
Fig. 6 - Amplification vs. Collector Current
0
1
1
0.01
0.01
0.1
λ = 950 nm
V
CE
I
E
- Collector Emitter Voltage (V)
C
0.1
e
- Collector Current (mA)
- Irradiance (mW/cm²)
0.1
1
V
CE
= 5 V
1
λ = 950 nm
V
CE
For technical questions, contact: detectortechsupport@vishay.com
= 5 V
E
e
10
0.05 mW/cm
0.02 mW/cm
1
0.1 mW/cm
= 1 mW/cm
0.5 mW/cm
0.2 mW/cm
10
Silicon NPN Phototransistor, RoHS Compliant
2
2
2
2
2
2
100
100
10
Fig. 8 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 7 - Collector Base Capacitance vs. Collector Base Voltage
94 8247
94 8253
Fig. 9 - Turn-on/Turn-off Time vs. Collector Current
94 8246
20
16
12
12
10
20
16
12
8
6
4
2
0
8
4
0
8
4
0
0.1
0
0.1
V
CE
V
CB
I
- Collector Ermitter Voltage (V)
C
4
- Collector Base Voltage (V)
- Collector Current (mA)
1
1
8
λ = 950 nm
R
f = 1 MHz
V
f = 1 MHz
L
CE
= 100 Ω
= 5 V
10
12
Document Number: 81504
10
t
on
t
off
Rev. 1.6, 05-Sep-08
16
100
100

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