BPW85 Vishay, BPW85 Datasheet - Page 2

• Manufacturer Part Number: BPW85
• Description: Photodetector Transistors NPN Phototransistor 70V 100mW 850nm
• Manufacturer: Vishay

Specifications of BPW85

• Rise Time: 2 us
• Maximum Power Dissipation: 100 mW
• Collector- Emitter Voltage Vceo Max: 70 V
• Collector-emitter Breakdown Voltage: 70 V
• Collector-emitter Saturation Voltage: 0.3 V
• Fall Time: 2.3 us
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Product: Phototransistor
• Package / Case: T-1
• Wavelength: 850 nm
• Transistor Polarity: NPN
• Wavelength Typ: 850nm
• Power Consumption: 100mW
• Viewing Angle: 25°
• No. Of Pins: 2
• Half Angle: 25°
• Collector Current Typ: 50mA
• Transistor Type: Photo
• Transistor Case Style: T-1
• Current Ic Typ: 50mA
• Fall Time Tf: 1.5µs
• Lead Spacing: 2.54mm
• Rohs Compliant: Yes
• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 200nA
• Power - Max: 150mW
• Mounting Type: Through Hole
• Orientation: Top View
• Svhc: No SVHC (20-Jun-2011)
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Clear
• Emitter-collector Voltage (max): 5V
• Collector-emitter Voltage: 70V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.3V
• Dark Current (max): 200nA
• Power Dissipation: 100mW
• Peak Wavelength: 850nm
• Half-intensity Angle: 50deg
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Note
T
Document Number: 81531
Rev. 1.8, 05-Sep-08
amb
BASIC CHARACTERISTICS
PARAMETER
Collector emitter breakdown voltage
Collector emitter dark current
Collector emitter capacitance
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Turn-off time
Cut-off frequency
TYPE DEDICATED CHARACTERISTICS
PARAMETER
Collector light current
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
94 8308
125
100
75
50
25
0
0
R
thJA
T
= 450 K/W
amb
20
- Ambient Temperature (°C)
Silicon NPN Phototransistor, RoHS Compliant
40
For technical questions, contact: [e-mail]
60
E
V
V
V
e
S
S
S
E
V
= 1 mW/cm
e
= 5 V, I
= 5 V, I
= 5 V, I
CE
TEST CONDITION
= 1 mW/cm
80
TEST CONDITION
= 5 V, f = 1 MHz, E = 0
V
CE
V
I
CE
C
C
C
C
I
= 20 V, E = 0
C
= 5 mA, R
= 5 mA, R
= 5 mA, R
100
= 0.1 mA
= 5 V
= 1 mA
2
, λ = 950 nm,
2
, λ = 950 nm,
L
L
L
= 100 Ω
= 100 Ω
= 100 Ω
BPW85C
BPW85A
BPW85B
PART
SYMBOL
V
V
(BR)CEO
C
I
λ
BPW85A, BPW85B, BPW85C
CEO
CEsat
t
t
λ
CEO
f
ϕ
on
off
0.1
c
p
SYMBOL
I
I
I
ca
ca
ca
MIN.
70
MIN.
0.8
1.5
3.0
Vishay Semiconductors
450 to 1080
TYP.
± 25
850
180
2.0
2.3
1
3
TYP.
MAX.
200
0.3
MAX.
2.5
4.0
8.0
www.vishay.com
UNIT
kHz
UNIT
deg
nm
nm
nA
pF
µs
µs
mA
mA
mA
V
V
415