BPW85 Vishay, BPW85 Datasheet - Page 4

• Manufacturer Part Number: BPW85
• Description: Photodetector Transistors NPN Phototransistor 70V 100mW 850nm
• Manufacturer: Vishay

Specifications of BPW85

• Rise Time: 2 us
• Maximum Power Dissipation: 100 mW
• Collector- Emitter Voltage Vceo Max: 70 V
• Collector-emitter Breakdown Voltage: 70 V
• Collector-emitter Saturation Voltage: 0.3 V
• Fall Time: 2.3 us
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Product: Phototransistor
• Package / Case: T-1
• Wavelength: 850 nm
• Transistor Polarity: NPN
• Wavelength Typ: 850nm
• Power Consumption: 100mW
• Viewing Angle: 25°
• No. Of Pins: 2
• Half Angle: 25°
• Collector Current Typ: 50mA
• Transistor Type: Photo
• Transistor Case Style: T-1
• Current Ic Typ: 50mA
• Fall Time Tf: 1.5µs
• Lead Spacing: 2.54mm
• Rohs Compliant: Yes
• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 200nA
• Power - Max: 150mW
• Mounting Type: Through Hole
• Orientation: Top View
• Svhc: No SVHC (20-Jun-2011)
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Clear
• Emitter-collector Voltage (max): 5V
• Collector-emitter Voltage: 70V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.3V
• Dark Current (max): 200nA
• Power Dissipation: 100mW
• Peak Wavelength: 850nm
• Half-intensity Angle: 50deg
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 81531
Rev. 1.8, 05-Sep-08
Fig. 10 - Relative Spectral Sensitivity vs. Wavelength
Fig. 9 - Turn-on/Turn-off Time vs. Collector Current
94 8294
94 8293
94 8348
1.0
0.8
0.6
0.4
0.2
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Fig. 8 - Collector Emitter Capacitance vs.
8
6
4
2
0
0
8
6
4
2
0
0.1
400
0
V
2
Collector Emitter Voltage
CE
I
- Collector Emitter Voltage (V)
C
- Collector Current (mA)
600
λ - Wavelength (nm)
4
1
Silicon NPN Phototransistor, RoHS Compliant
6
f = 1 MHz
R
λ
V
L
800
CE
8
= 950 nm
= 100 Ω
For technical questions, contact: [e-mail]
= 5 V
10
10
t
on
t
off
12
1000
100
14
Fig. 11 - Relative Radiant Sensitivity vs. Angular Displacement
BPW85A, BPW85B, BPW85C
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1.0
0.9
0.8
0.7
0.6
0.4
Vishay Semiconductors
0.2
0°
0
10°
20°
www.vishay.com
30°
40°
50°
60°
70°
80°
417