BPX 48 OSRAM Opto Semiconductors Inc, BPX 48 Datasheet - Page 4
BPX 48
Manufacturer Part Number
BPX 48
Description
Photodiodes PHOTODIODE (differential) DIL
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheet
1.BPX_48.pdf
(6 pages)
Specifications of BPX 48
Photodiode Material
Silicon
Peak Wavelength
900 nm
Half Intensity Angle Degrees
60 deg
Maximum Reverse Voltage
10 V
Maximum Power Dissipation
50 mW
Maximum Light Current
24 uA
Maximum Dark Current
100 nA
Maximum Rise Time
500 ns
Maximum Fall Time
500 ns
Package / Case
PDIP-4
Maximum Operating Temperature
+ 80 C
Minimum Operating Temperature
- 40 C
Polarity
Forward
Reverse Breakdown Voltage
10V
Forward Voltage
1.3V
Responsivity
0.55A/W
Dark Current (max)
100nA
Power Dissipation
50mW
Light Current
24uA
Rise Time
500ns
Fall Time
500ns
Operating Temp Range
-40C to 80C
Operating Temperature Classification
Commercial
Mounting
Through Hole
Pin Count
4
Package Type
PDIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q62702P0017S001
Relative Spectral Sensitivity
S
Capacitance
C =
Directional Characteristics
S
2007-04-04
rel
rel
100
=
= f (ϕ)
50
60
70
80
90
f
(
f
V
(λ)
R
), f = 1 MHz, E = 0
1.0
40
0.8
30
0.6
20
0.4
10
ϕ
1.0
0.8
0.6
0.4
0.2
0
0
0
Total Power Dissipation
P
Dark Current
I
R
tot
20
=
=
f
f
(
T
40
(T
A
A
),
)
V
60
R
= 10 V
80
4
100
OHF01402
120
Photocurrent I
Open-Circuit Voltage
Dark Current
I
R
=
f
(
V
R
), E = 0
P
=
f
(E
v
V
),
O
V
BPX 48
=
R
f
= 5 V
(E
v
)