BPX 48 OSRAM Opto Semiconductors Inc, BPX 48 Datasheet - Page 5
BPX 48
Manufacturer Part Number
BPX 48
Description
Photodiodes PHOTODIODE (differential) DIL
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheet
1.BPX_48.pdf
(6 pages)
Specifications of BPX 48
Photodiode Material
Silicon
Peak Wavelength
900 nm
Half Intensity Angle Degrees
60 deg
Maximum Reverse Voltage
10 V
Maximum Power Dissipation
50 mW
Maximum Light Current
24 uA
Maximum Dark Current
100 nA
Maximum Rise Time
500 ns
Maximum Fall Time
500 ns
Package / Case
PDIP-4
Maximum Operating Temperature
+ 80 C
Minimum Operating Temperature
- 40 C
Polarity
Forward
Reverse Breakdown Voltage
10V
Forward Voltage
1.3V
Responsivity
0.55A/W
Dark Current (max)
100nA
Power Dissipation
50mW
Light Current
24uA
Rise Time
500ns
Fall Time
500ns
Operating Temp Range
-40C to 80C
Operating Temperature Classification
Commercial
Mounting
Through Hole
Pin Count
4
Package Type
PDIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q62702P0017S001
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
2007-04-04
1.10 (0.043)
Radiant sensitive area
Approx. weight 0.1 g
Diode system
2.54 (0.100)
0.09 (0.004)
0.4 (0.016)
4.05 (0.159)
3.75 (0.148)
0.8 (0.031)
0.6 (0.024)
0.5 (0.020)
0.3 (0.012)
2.0 (0.079) x 0.67 (0.026)
anode
0.7 (0.028)
0.5 (0.020)
2.54 (0.100)
cathode
5
7.8 (0.307)
7.4 (0.291)
0...5˚
7.62 (0.300) spacing
6.6 (0.260)
6.3 (0.248)
GEOY6638
BPX 48