AH125-89PCB900 TriQuint, AH125-89PCB900 Datasheet - Page 3

RF Modules & Development Tools .4-2.7GHz Eval Board

AH125-89PCB900

Manufacturer Part Number
AH125-89PCB900
Description
RF Modules & Development Tools .4-2.7GHz Eval Board
Manufacturer
TriQuint
Datasheet

Specifications of AH125-89PCB900

Board Size
4.25 mm x 4.6 mm x 1.6 mm
Minimum Frequency
400 MHz
Minimum Operating Temperature
- 40 C
Supply Voltage (min)
5 V
Product
RF Modules
Maximum Frequency
3.6 GHz
Supply Voltage (max)
6 V
Supply Current
170 mA
Maximum Operating Temperature
+ 85 C
For Use With/related Products
AH125
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1071315
AH125
½W High Linearity InGaP HBT Amplifier
Frequency
Gain
Input Return Loss
Output Return Loss
EVM
ACLR
Output P1dB
Output IP3
Pout=+18 dBm/tone, 1MHz spacing
Quiescent Current, Icq
Vcc
Note: For improved output return loss, ≥10dB, please contact TriQuint applications support for a reference design employing feedback. Corresponding OIP3
performance will be ~+43dBm.
TriQuint Semiconductor, Inc • Phone 503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com
Pout=+18 dBm
Pout=+18 dBm
Typical O-FDMA Performance at 25°C
22
21
20
19
18
17
700
T
LEAD
=+25°C
720
Frequency (MHz)
Gain vs. Frequency
740
+28.9 +29.4 +29.2 dBm
+43.7 +46.2 +45.5 dBm
-52.6
20.4
802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels, 5 MHz Carrier BW
700
7.5
0.9
12
5
4
3
2
1
0
760
15
20.3
750
150
-56
802.16-2004 O-FDMA, 64QAM-
1/2, 1024-FFT, 20 symbols and 30
subchannels, 5 MHz Carrier BW
6.8
0.7
17
+5
16
780
-54.4
20.1
800
6.3
0.7
25
700 MHz
17
EVM vs. Output Power
700-800 MHz Reference Design
Output Power (dBm)
MHz
800
dBc
mA
dB
dB
dB
18
%
V
750 MHz
-10
-15
-20
-25
-30
-5
19
0
700
 
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
T
800 MHz
LEAD
20
The primary RF microstrip line is 50
Components shown on the silkscreen but not on the schematic are not used.
0
The edge of C11 is placed at 40 mil from AH125 RFout pin. (1.7
The edge of R3 is placed at 210 mil from the edge of C11. (8.7
The edge of C9 is placed next to the edge of R3.
The edge of R1 is placed at 100 mil from AH125 RFin pin. (4.2
The edge of C10 is placed 250 mil from the edge of R1. (10.4
=+25°C
T
Ω
720
LEAD
jumpers can be replaced with copper trace in target application.
=+25°C
21
Frequency (MHz)
740
Return Loss
22
S11
-40
-45
-50
-55
-60
-65
760
15
S22
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7 dB @ 0.01% Probability
3.84 MHz BW
780
16
700 MHz
ACLR vs. Output Power
Output Power (dBm)
800
17
Ω
Specifications and information are subject to change without notice
.
750 MHz
50
45
40
35
30
10
18
T
LEAD
800 MHz
T
=+25°C
LEAD
12
19
=+25°C
OIP3 vs. Output Power/Tone
700 MHz
Output Power/Tone (dBm)
o
o
14
@ 750 MHz)
20
o
@ 750 MHz)
o
@ 750 MHz)
@ 750 MHz)
750 MHz
16
Page 3 of 12 April 2010
800 MHz
18
20

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