AH212-S8PCB2140 TriQuint, AH212-S8PCB2140 Datasheet
AH212-S8PCB2140
Specifications of AH212-S8PCB2140
Related parts for AH212-S8PCB2140
AH212-S8PCB2140 Summary of contents
Page 1
... AH212-S8G +26 dBm AH212- 900 mA AH212-S8PCB1960 5 W AH212-S8PCB2140 33 °C/W AH212-EPCB1960 +200 °C AH212-EPCB2140 Standard tape / reel size = 500 pieces for SOIC-8 package on a 7” reel Standard tape / reel size = 1000 pieces for DFN package on a 7” reel. Functional Diagram ...
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... The gain for the unmatched device in 50-ohm system is shown as the trace in blue color. For a band specific tuned circuit expected that actual gain will be higher. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increment. S-Parameters for AH212-S8G (V CC ...
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... AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier AH212-S8 1850 MHz Reference Design Typical RF Performance at 25 °C Frequency (MHz) 1800 Gain (dB) 25.4 Input Return Loss (dB) 10.5 Output Return Loss (dB) 15.5 Output P1dB (dBm) +30.5 Output IP3 (dBm) +47 (+15 dBm / tone, 1 MHz spacing) Noise Figure (dB) 5 ...
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... AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier 1960 MHz Application Circuit (AH212-S8PCB1960) Typical RF Performance at 25 °C Frequency 1960 MHz Gain 24.6 dB Input Return Loss 12.5 dB Output Return Loss 10 dB Output P1dB +30 dBm Output IP3 +48 dBm (+15 dBm / tone, 1 MHz spacing) ...
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... AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier AH212-S8 2015 MHz Reference Design for TD-SCDMA Applications Typical RF Performance at 25 °C Frequency (MHz) 2010 Gain (dB) 24.6 Input Return Loss (dB) 16 Output Return Loss (dB) 9.5 Output P1dB (dBm) +30 Output IP3 (dBm) +47 (+15 dBm / tone, 1 MHz spacing) ...
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... AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier 2140 MHz Application Circuit (AH212-S8PCB2140) Typical RF Performance at 25 °C Frequency 2140 MHz Gain 24.7 dB Input Return Loss 25 dB Output Return Loss 9 dB Output P1dB +29.5 dBm Output IP3 +46 dBm (+15 dBm / tone, 1 MHz spacing) ...
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... AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier AH212-S8 2350 MHz Reference Design for WiBro Applications Typical RF Performance at 25 °C Frequency (MHz) 2300 2350 Gain (dB) 24.5 24.4 Input Return Loss (dB Output Return Loss (dB) 7.5 Output P1dB (dBm) +30.4 +30 Output IP3 (dBm) +45 +44 ...
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... The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a band specific tuned circuit expected that actual gain will be higher. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increment. S-Parameters for AH212- ...
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... AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier 1960 MHz Application Circuit (AH212-EPCB1960) Typical RF Performance at 25 °C Frequency 1960 MHz Gain 27 dB Input Return Loss 16 dB Output Return Loss 10 dB Output P1dB +30.5 dBm Output IP3 +46.5 dBm (+15 dBm / tone, 1 MHz spacing) Channel Power +24 ...
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... AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier 2140 MHz Application Circuit (AH212-EPCB2140) Typical RF Performance at 25 °C eFrequency 2140 MHz Gain 25.5 dB Input Return Loss 24 dB Output Return Loss 9 dB Output P1dB +30.5 dBm Output IP3 +46 dBm (+15 dBm / tone, 1 MHz spacing) ...
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... TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Product Marking The component will be marked with an “AH212G” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “ ...
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... AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier AH212-EG (Lead-Free DFN 4x5 mm Package) Mechanical Information This package is lead-free/ RoHS-compliant. The plating material on the leads is Matte Tin compatible with both lead-free (maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes. ...