AH212-S8G TriQuint, AH212-S8G Datasheet
AH212-S8G
Specifications of AH212-S8G
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AH212-S8G Summary of contents
Page 1
... ACLR Noise Figure 340 400 500 Supply Bias 85 3. The performance is shown for the AH212-S8G (SOIC-8 package) at 25ºC. The AH212- 4x5 315 mm DFN package offers approximately 0.5dB more gain and 0.5 dB higher P1dB. 5 Ordering Information Part No. Rating -65 to +150 °C ...
Page 2
... The gain for the unmatched device in 50-ohm system is shown as the trace in blue color. For a band specific tuned circuit expected that actual gain will be higher. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increment. S-Parameters for AH212-S8G (V CC ...
Page 3
... AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier AH212-S8 1850 MHz Reference Design Typical RF Performance at 25 °C Frequency (MHz) 1800 Gain (dB) 25.4 Input Return Loss (dB) 10.5 Output Return Loss (dB) 15.5 Output P1dB (dBm) +30.5 Output IP3 (dBm) +47 (+15 dBm / tone, 1 MHz spacing) Noise Figure (dB) 5 ...
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... AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier 1960 MHz Application Circuit (AH212-S8PCB1960) Typical RF Performance at 25 °C Frequency 1960 MHz Gain 24.6 dB Input Return Loss 12.5 dB Output Return Loss 10 dB Output P1dB +30 dBm Output IP3 +48 dBm (+15 dBm / tone, 1 MHz spacing) ...
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... AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier AH212-S8 2015 MHz Reference Design for TD-SCDMA Applications Typical RF Performance at 25 °C Frequency (MHz) 2010 Gain (dB) 24.6 Input Return Loss (dB) 16 Output Return Loss (dB) 9.5 Output P1dB (dBm) +30 Output IP3 (dBm) +47 (+15 dBm / tone, 1 MHz spacing) ...
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... AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier 2140 MHz Application Circuit (AH212-S8PCB2140) Typical RF Performance at 25 °C Frequency 2140 MHz Gain 24.7 dB Input Return Loss 25 dB Output Return Loss 9 dB Output P1dB +29.5 dBm Output IP3 +46 dBm (+15 dBm / tone, 1 MHz spacing) ...
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... AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier AH212-S8 2350 MHz Reference Design for WiBro Applications Typical RF Performance at 25 °C Frequency (MHz) 2300 2350 Gain (dB) 24.5 24.4 Input Return Loss (dB Output Return Loss (dB) 7.5 Output P1dB (dBm) +30.4 +30 Output IP3 (dBm) +45 +44 ...
Page 8
... The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a band specific tuned circuit expected that actual gain will be higher. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increment. S-Parameters for AH212- ...
Page 9
... AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier 1960 MHz Application Circuit (AH212-EPCB1960) Typical RF Performance at 25 °C Frequency 1960 MHz Gain 27 dB Input Return Loss 16 dB Output Return Loss 10 dB Output P1dB +30.5 dBm Output IP3 +46.5 dBm (+15 dBm / tone, 1 MHz spacing) Channel Power +24 ...
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... AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier 2140 MHz Application Circuit (AH212-EPCB2140) Typical RF Performance at 25 °C eFrequency 2140 MHz Gain 25.5 dB Input Return Loss 24 dB Output Return Loss 9 dB Output P1dB +30.5 dBm Output IP3 +46 dBm (+15 dBm / tone, 1 MHz spacing) ...
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... AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier AH212-S8G (Lead-Free SOIC-8 Package) Mechanical Information This package is lead-free/ RoHS-compliant. The plating material on the leads is NiPdAu compatible with both lead-free (maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes. ...
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... AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier AH212-EG (Lead-Free DFN 4x5 mm Package) Mechanical Information This package is lead-free/ RoHS-compliant. The plating material on the leads is Matte Tin compatible with both lead-free (maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes. ...