TGA2511 TriQuint, TGA2511 Datasheet

RF Amplifier 6-14 GHz LNA (Self Biased)

TGA2511

Manufacturer Part Number
TGA2511
Description
RF Amplifier 6-14 GHz LNA (Self Biased)
Manufacturer
TriQuint
Type
Low Noise Amplifierr
Datasheet

Specifications of TGA2511

Operating Frequency
6 GHz to 14 GHz
P1db
6 dBm
Noise Figure
1.3 dB
Operating Supply Voltage
5 V
Supply Current
160 mA
Maximum Power Dissipation
1.56 W
Package / Case
2.05 mm x 1.2 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1026041

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TGA2511
Manufacturer:
TRIQUINT
Quantity:
5 000
The TriQuint TGA2511 is a wideband LNA with
AGC amplifier for EW, ECM, and RADAR
receiver or driver amplifier applications.
Offering high gain 20dB typical from 6-14GHz,
the TGA2511provides excellent noise
performance with typical midband NF 1.3dB,
while the balanced topology offers good return
loss typically 15dB.
The TGA2511 is designed for maximum ease
of use. The large input FETs can handle up to
21dBm input power reliably. The part is also
assembled in self-biased mode, using a single
+5V supply connection from either side of the
chip, or in gate biased mode, allowing the user
to control the current for a particular
applications.
In self-biased mode the TGA2511 offers 6dBm
typical P1dB, while in gate-biased mode the
typical P1dB is over 12dBm. The small size of
2.46mm
Chip-Modules (MCMs).
The TGA2511 is 100% DC and RF tested on-
wafer to ensure performance compliance.
Lead-Free & RoHS compliant.
Product Description
Datasheet subject to change without notice
2
allows ease of compaction into Multi-
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
X Band Low Noise Amplifier
March 2010 © Rev A
Bias Conditions: Gate Bias Vd = 5 V, Id = 160 mA
Key Features
-10
-20
-30
30
30
20
10
5
4
3
2
1
0
0
Primary Applications
Measured Fixtured Data
4
4
Typical Frequency Range: 6 - 14 GHz
1.3 dB Nominal Noise Figure
20 dB Nominal Gain
Bias: 5 V, 160 mA Gate Bias
0.15 um 3MI pHEMT Technology
Chip Dimensions 2.05 x 1.20 x 0.10 mm
X-Band Radar
EW, ECM
Point-to-Point Radio
IRL
6
6
5 V, 80 mA Self Bias
8
8
Frequency (GHz)
Frequency (GHz)
GAIN
GAIN
(0.081 x 0.047 x 0.004 in)
10
10
12
12
TGA2511
14
14
16
16
ORL
18
18
1

Related parts for TGA2511

TGA2511 Summary of contents

Page 1

... P1dB is over 12dBm. The small size of 2 2.46mm allows ease of compaction into Multi- Chip-Modules (MCMs). The TGA2511 is 100% DC and RF tested on- wafer to ensure performance compliance. Lead-Free & RoHS compliant. Datasheet subject to change without notice TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Key Features • ...

Page 2

... TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE I MAXIMUM RATINGS 1/ VALUE Gate Bias: [3.5 + (0.0125)(Id)] V Self Bias: [3.5 + (0.0360)(Id +0.5 V 240 dBm 1.56 W 200 ° C 320 ° C -65 to 150 ° C TABLE II C, Nominal) ° MIN. TYP. -30 -0.7 March 2010 © Rev A TGA2511 NOTES MAX. UNITS - ...

Page 3

... Output Return Loss, S22 Noise Figure, NF Output Power @ 1dB Gain Compression, P1dB OIP3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE III 0 C Nominal) Gate Bias Self Bias 5.0 5.0 160 80 -0 1.3 1 March 2010 © Rev A TGA2511 UNITS GHz dBm dBm 3 ...

Page 4

... Channel Temperature ( C) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE IV θ θ θ θ (° ° ° ° C) (° ° ° ° C/W) 103.9 42.4 82.7 31.7 75 100 125 ° March 2010 © Rev A TGA2511 T m (HRS) 3.8E+6 4.1E+7 150 4 ...

Page 5

... Measured Fixtured Data Bias Conditions: Gate Bias 160 Frequency (GHz) Frequency (GHz) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com March 2010 © Rev A TGA2511 ...

Page 6

... Measured Fixtured Data Bias Conditions: Gate Bias 160 -10 -15 -20 -25 -30 - Frequency (GHz) Frequency (GHz -10 -15 -20 -25 -30 - Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com March 2010 © Rev A TGA2511 ...

Page 7

... Measured Fixtured Data Bias Conditions: Gate Bias 160 Frequency (GHz) Frequency (GHz Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com March 2010 © Rev A TGA2511 ...

Page 8

... Measured Fixtured Data Bias Conditions: Self Bias Frequency (GHz) Frequency (GHz) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com March 2010 © Rev A TGA2511 ...

Page 9

... Measured Fixtured Data Bias Conditions: Self Bias -10 -15 -20 -25 -30 - Frequency (GHz -10 -15 -20 -25 -30 - Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com March 2010 © Rev A TGA2511 ...

Page 10

... Measured Fixtured Data Bias Conditions: Self Bias Frequency (GHz Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com March 2010 © Rev A TGA2511 ...

Page 11

... March 2010 © Rev A TGA2511 1.955 1.897 (0.077) (0.075) 6 0.600 7 (0.024) 0.095 8 8 (0004) (0004) 2.050 1 ...

Page 12

... All DC connections may be brought in from either side of the chip (Use Pad 0.01uF external Cap is recommended on Drain Bias (Id = ~80mA) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Vd 100pF RF Out March 2010 © Rev A TGA2511 12 ...

Page 13

... All DC connections may be brought in from either side of the chip (Use Pad and Pad 0.01uF external Caps are recommended on Drain line Bias (Id = ~80mA), Vctrl = 0 to +5V for Gain adjustment TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Vctrl Vd 100pF 100pF RF Out March 2010 © Rev A TGA2511 13 ...

Page 14

... Source connections (Pad 2, 3, 11, 12) are bonded to ground. All four bond wires are required for stability. Bias Vctrl = 0 to +5V for Gain adjustment Vg = Range, -0 typically ~ -0.1 will provide ~160mA of Id. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Vctrl Vd 100pF 100pF 100pF RF Out March 2010 © Rev A TGA2511 14 ...

Page 15

... Aluminum wire should not be used. • Maximum stage temperature is 200 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com 0 C. March 2010 © Rev A TGA2511 0 C (30 seconds max). 15 ...

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