TGA2511 TriQuint, TGA2511 Datasheet - Page 2

• Manufacturer Part Number: TGA2511
• Description: RF Amplifier 6-14 GHz LNA (Self Biased)
• Manufacturer: TriQuint
• Type: Low Noise Amplifierr

Specifications of TGA2511

• Operating Frequency: 6 GHz to 14 GHz
• P1db: 6 dBm
• Noise Figure: 1.3 dB
• Operating Supply Voltage: 5 V
• Supply Current: 160 mA
• Maximum Power Dissipation: 1.56 W
• Package / Case: 2.05 mm x 1.2 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1026041

1/
2/
3/
4/
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5/
6/
7/
SYMBOL
Q1, Q2, Q5, Q6 are 400 um FET.
SYMBOL
V
V
BVGS, Q1
P, Q1,2,5,6
Ig
T
T
P
Vd
Vg
T
P
Id
STG
These ratings represent the maximum operable values for this device.
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
Unit for Id is mA.
Total current for the entire MMIC.
Total current for the entire MMIC.
When operated at this bias condition with a base plate temperature of 70°C, the median life is
3.4E5.
Junction operating temperature will directly affect the device median time to failure (Tm). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
These ratings apply to each individual FET.
CH
IN
M
D
TriQuint Semiconductor: www. triquint.com [phone] Fax [phone] [e-mail]
Drain Voltage
Gate Voltage Range
Drain Current (gate biased)
Gate Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
Breakdown Voltage Gate-Source
Pinch-Off Voltage
PARAMETER
PARAMETER
(Ta = 25
DC PROBE TESTS
MAXIMUM RATINGS 1/
TABLE II
March 2010 © Rev A
°
C, Nominal)
TABLE I
Gate Bias: [3.5 + (0.0125)(Id)] V
Self Bias: [3.5 + (0.0360)(Id)] V
MIN.
-0.7
-30
-65 to 150 ° C
-1 TO +0.5 V
VALUE
21 dBm
240 mA
1.56 W
200 ° C
320 ° C
14 mA
TYP.
MAX.
-0.1
-5
NOTES
TGA2511
UNITS
2/ 3/
2/ 4/
2/ 5/
6/ 7/
4/
V
V
D
.
2