AH322-S8G TriQuint, AH322-S8G Datasheet - Page 4

RF Amplifier 2W RF AMP 400-2700MHz

AH322-S8G

Manufacturer Part Number
AH322-S8G
Description
RF Amplifier 2W RF AMP 400-2700MHz
Manufacturer
TriQuint
Type
General Purpose Amplifierr
Datasheet

Specifications of AH322-S8G

Mounting Style
SMD/SMT
Number Of Channels
1
Operating Frequency
2700 MHz
Noise Figure
4.8 dB @ 2700 MHz
Operating Supply Voltage
5 V
Supply Current
500 mA
Maximum Operating Temperature
+ 200 C
Package / Case
SOIC-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1070573

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TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com
AH322
2W High Linearity InGaP HBT Amplifier
20
19
18
17
16
15
-40
-45
-50
-55
-60
-65
-70
-75
-80
920
Frequency (MHz)
Gain
Input Return Loss
Output Return Loss
Output P1dB
Channel Power
(@-55 dBc IS-95 CDMA ACPR)
Channel Power
(@ -50 dBc WCDMA ACLR)
Output IP3
(21 dBm / tone, 1MHz spacing)
Noise Figure
Quiescent Current, Icq
Vpd
Vcc
IS-95CDMA, 9 Ch. Fwd, ±885 KHz Offset, 30 KHz Meas BW, 940 MHz
17 18 19 20 21 22 23 24 25 26 27
(4)
930
Small Signal Performance
S21
Output Channel Power (dBm)
Typical RF Performance at 25 ° ° ° ° C
ACPR vs. Channel Power
+25C
(3)
Frequency (MHz)
(1)
(2)
940
25 C
S11
920 - 960 MHz Application Circuit (AH322-S8PCB900)
-40C
S22
950
units
dBm
dBm
dBm
dBm
mA
dB
dB
dB
dB
+85C
V
V
960
+24.3
+23.5
+47.3
19.2
16.6
920
+33
0
-5
-10
-15
-20
-25
7.8
8.2
-30
-35
-40
-45
-50
-55
-60
-40
-45
-50
-55
-60
-65
-70
-75
-80
+24.4
+23.6
+47.6
19.4
940
+33
600
8.5
8.5
+5
+5
18
17 18 19 20 21 22 23 24 25 26 27
IS-95CDMA, 9 Ch. Fwd, ±885 KHz Offset, 30 KHz Meas BW, 25C
17 18 19 20 21 22 23 24 25 26 27
3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 940 MHz
+25C
Output Channel Power (dBm)
+24.3
+23.5
+47.2
Output Channel Power (dBm)
19.2
15.3
ACLR vs. Channel Power
960
+33
ACPR vs. Channel Power
920 MHz
9.4
9
-40C
940 MHz
Notes:
1. ACPR test set-up: IS-95 CDMA, 9 channels fwd, ±885 KHz offset, 30 KHz, Meas BW, PAR = 9.7 dB
2. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset no clipping, PAR = 10.34 dB @
3. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing.
4. Vpd is used as device power down voltage (low = RF off).
5. The edge of L2 is placed at 380 mils from the edge of AH322 RFout pin (19 º @ 940 MHz)
6. The edge of C2 is placed at 190 mils from the edge of AH322 RFout pin (9.5 º @ 940 MHz).
7. Do not exceed +5.5V supply or TVS diode D3 will be damaged.
8. 0
9. DNP implies Do Not Place.
+85C
@ 0.01% Prob.
0.01% Probability.
jumpers may be replaced with copper traces in the target application layout.
960 MHz
-30
-35
-40
-45
-50
-55
-60
21
20
19
18
17
16
15
27
17 18 19 20 21 22 23 24 25 26 27
3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 25C
28
Output Channel Power (dBm)
920 MHz
ACLR vs. Channel Power
Gain vs. Pout vs. Temp
29
25C
Freq. = 940 MHz
Pout (dBm)
30
-40C
940 MHz
31
+85C
32
960 MHz
33
April 2009
34
.

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